Features of electrostimulated degradation of aluminum metallization on silicon surface in the presence of dielectric steps

Скворцов, А. А.; Rybin, V. V.

doi:10.1134/s1063785010030247

Cited by 4 publications

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“…5c). The molecular layer of an aqueous adsorbate at the interface between graphene and silicon (silicon oxide) substrate [10,11] exists in a quasi-solid state, in the form of ice.…”

Section: T °Cmentioning

confidence: 99%

Application of Graphene in The Cooling System of a Personal Electronic Computer

et al. 2021

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A study of the application of a graphene-based cooling system for a personal electronic computer (PC) is presented. The features of using monocrystalline and polycrystalline graphene in practice are analyzed. A comparison is made with the materials currently used in the cooling systems of a PC. The heat flux densities are calculated as a function of the temperature between the copper plate and the water adsorbate and between the two layers of polycrystalline graphene and water adsorbate. The prospects for the use of graphene in cooling systems of PCs are outlined.

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“…5c). The molecular layer of an aqueous adsorbate at the interface between graphene and silicon (silicon oxide) substrate [10,11] exists in a quasi-solid state, in the form of ice.…”

Section: T °Cmentioning

confidence: 99%

Application of Graphene in The Cooling System of a Personal Electronic Computer

et al. 2021

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“…-"Open" code of the microcontroller [3], which allows the completion and optimization of the device software.…”

Section: Formulation Of the Problemmentioning

confidence: 99%

Calculation of the Energy of Capacitors for a Spot Welding Apparatus by a Numerical Method

Varlamov

Fironov

Kanareykin

et al. 2020

Proceedings of the 30th International Conference on Computer Graphics and Machine Vision (GraphiCon 2020). Part 2

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This article provides information on the development of an adjustable spot welder implemented on the basis of the capacitor principle without a transformer. Also the scientific work considers the calculation of the energy of the capacitors for a spot welding apparatus using modern methods of numerical simulation and programming. The method of calculation is given, as well as a mathematical solution tool. The calculation results are compared with the experiment. Based on the data obtained, according to the results of calculations, work was carried out on a prototype, the result of which was an adjustable spot welder. It allows you to accurately and quickly weld nickel plates to lithium cells, creating full-fledged batteries from them, which are widely used in modern technology, including promising vehicles. The presence of sensors and a screen allows the operator to control the charging process and the direct operation of the unit, which simplifies the use of the device.

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“…Previously, we have established [8] that the degra dation of aluminum based metallization systems is related to the formation of a fused zone (at a tempera ture of melting of the metal film) and contact melting at the Al/Si interface (which is manifested on reaching a melting temperature of the Al-Si eutectic). Thermal regimes in a thin metal film on a heat exchange sub strate were studied by measuring U(t) waveforms [8,9].…”

Section: Phase Transformations In Metallization Systems Under Conditimentioning

confidence: 99%

“…Thermal regimes in a thin metal film on a heat exchange sub strate were studied by measuring U(t) waveforms [8,9]. Monotonic growth of U(t) during relatively short times t after switching on the current pulse is related to heat ing of the metal film and determined by the regime of heat removal to the semiconductor substrate (Figs.…”

Section: Phase Transformations In Metallization Systems Under Conditimentioning

confidence: 99%

“…The experimental setup was analogous to that used in [8] and included a source of rectangular current pulses with amplitude of up to 60 A and durations up to 1 ms, a master oscillator, a digital storage oscillo scope, and a microscope (Metam R1) with "numeri cal" eye glass for determining the length of a fused zone. The measurements were performed on test sam ples with a metallization stripe (length, 3 mm; width, 75 μm; thickness, up to 5 μm) on a semiconductor substrate (Fig.…”

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Phase transformations in metallization systems under conditions of nonstationary thermal action

Скворцов¹,

Каленков²,

Koryachko³

2014

Tech. Phys. Lett.

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In assessing the reliability of metallization systems, most researchers focus their attention on long term experiments under conditions of subcritical current densities and study degradation processes that are not related to the formation of fused zones [1,2]. How ever, increased electric powers and other severe work ing conditions (in particular, in high current electron ics) favor the degradation of metallization layers up to their fusion. Special investigations have been devoted to the development of methods for diagnostics of met allization systems [3][4][5], including their operation under high thermal loads leading to local phase transi tions [6,7].The present work was aimed at studying phase tran sitions in metallization systems under conditions of thermal impacts caused by rectangular current pulses with amplitude up to j = 8 × 10 10 A/m 2 and durations within τ i = 100-1000 μs.The experimental setup was analogous to that used in [8] and included a source of rectangular current pulses with amplitude of up to 60 A and durations up to 1 ms, a master oscillator, a digital storage oscillo scope, and a microscope (Metam R1) with "numeri cal" eye glass for determining the length of a fused zone. The measurements were performed on test sam ples with a metallization stripe (length, 3 mm; width, 75 μm; thickness, up to 5 μm) on a semiconductor substrate (Fig. 1, inset A).The main current carrying layer in test structures was made of aluminum, which is the main metal used for the metallization of semiconductors. The substrate was made of phosphorus doped (111) oriented silicon plate with a resistivity of 0.01 Ω cm covered with a 60 μm thick n type epilayer (15 Ω cm), which pre vents shunting of the metallization. Some substrates were covered by additional dielectric layers of silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ) (Fig. 1, inset B). The nitride layer was deposited via reaction of dichlo rosilane with ammonia at reduced pressure (~50 Pa) in a temperature interval of 700-900°C. The thermal oxide layer was grown in a temperature interval of 1150-1250°C by standard technology in a diffusion furnace filled with dry oxygen. Some samples were Abstract-First order phase transitions induced in aluminum metallization layers by the passage of single rectangular current pulses with amplitude up to 8 × 10 10 A/m 2 and durations within 100-1000 μs are consid ered. The formation of local fused zones and their subsequent migration during current passage have been experimentally studied. The main mechanisms of interphase boundary propagation due to heat evolution at the solid/liquid interface under conditions of nonstationary heating of the metal film are established. The velocity of liquid phase propagation (~25 m/s) along the metallization stripe has been determined in exper iment and a method of calculating the length of a fused zone upon the current pulse passage is proposed.

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Features of electrostimulated degradation of aluminum metallization on silicon surface in the presence of dielectric steps

Cited by 4 publications

References 0 publications

Application of Graphene in The Cooling System of a Personal Electronic Computer

Application of Graphene in The Cooling System of a Personal Electronic Computer

Calculation of the Energy of Capacitors for a Spot Welding Apparatus by a Numerical Method

Phase transformations in metallization systems under conditions of nonstationary thermal action

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