Features of Raman scattering and X-ray diffraction in As-Se-Te(S) chalcogenide glasses doped by samarium

Alekberov, R. I.; Isayev, A. I.; Mekhtiyeva, S. I.

doi:10.1080/15421406.2020.1860524

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…Furthermore, samarium as dopant also exhibits improved electronic, photocatalytic degradation under visible light and solar cell applications . In addition, Sm +3 -doped chalcogenides, including Se 95 Te 5 , As-Se-Te, and As-Se-S, have been prepared and studied for better thermal stability and ultra-fast phase-changing memory devices. Similarly, In as dopant has been well explored as a photocatalyst, and for photovoltaic, photoelectrochemical, and electrochemical properties, as well as for enhanced gas-sensing application. , Moreover, different In-incorporated chalcogenides like Se-Te-In, GeTe, and Cu-Cr-Se have been studied in detail for their superior thermoelectric and optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

et al. 2023

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Doped Sb2Te3 narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped Sb2Te3 microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD) was used to verify the synthesis of single-phase doped and undoped Sb2Te3 and doping of Sm and In within the crystal lattice of Sb2Te3. Further, the morphology, structure elucidation, and stability have been investigated systematically by scanning electron microscopy (SEM), Raman analysis, and thermogravimetric analysis (TGA). These analyses verified the successful synthesis of hexagonal undoped Sb2Te3 (AT) and (Sm, In)-doped Sb2Te3 (SAT, IAT) microstructures. Moreover, the comparison of dielectric parameters, including dielectric constant, dielectric loss, and tan loss of AT, SAT, and IAT, was done in detail. An increment in the electrical conductivities, both AC and DC, from 1.92 × 10–4 to 4.9 × 10–3 Ω–1 m–1 and a decrease in thermal conductivity (0.68–0.60 W m–1 K–1) were observed due to the doping by trivalent (Sm, In) dopants. According to our best knowledge, the synthesis and dielectric properties of (Sm, In)-doped and undoped Sb2Te3 in comparison with their electrical properties and thermal conductivity have not been reported earlier. This implies that appropriate doping with (Sm, In) in Sb2Te3 is promising to enhance the electronic and thermoelectric behavior.

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Section: Introductionmentioning

confidence: 99%

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

et al. 2023

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Vibrational properties of YbAs₂S₄ and YbAs₂Se₄ compounds: by infrared spectroscopy

et al. 2022

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Features of Raman scattering and X-ray diffraction in As-Se-Te(S) chalcogenide glasses doped by samarium

Cited by 2 publications

References 18 publications

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

Vibrational properties of YbAs₂S₄ and YbAs₂Se₄ compounds: by infrared spectroscopy

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Features of Raman scattering and X-ray diffraction in As-Se-Te(S) chalcogenide glasses doped by samarium

Cited by 2 publications

References 18 publications

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb2Te3 Microstructures

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb2Te3 Microstructures

Vibrational properties of YbAs2S4 and YbAs2Se4 compounds: by infrared spectroscopy

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Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

Vibrational properties of YbAs₂S₄ and YbAs₂Se₄ compounds: by infrared spectroscopy