Features of tensoresistance in single crystals of germanium and silicon with different dopants

Abstract

Abstract. Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρ X /ρ 0 = f (X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals

“…It is known [14] that in the unirradiated n-Ge crystals without deep levels, the resistivity for crystallographic direction [111] first increases with the increasing mechanical stress that is applied along this direction, and then goes to saturation, similarly as in n-Si, when the pressure is applied along the [100] direction. ∆ and 2 ∆′ of n-Si in the neighborhood of points X 1 at the expense of the directional deformation (solid lines -in the absence of deformation Х = 0, dashed lines -for Х ≠ 0).…”

Influence of gamma irradiation (60Co) on the electrophysical parameters of n-Ge with a different doping level and with oxygen impurity in different states

“…Both the concentration and the mobility of charge carriers ultimately depend on these circumstances [15,16]. These problems can be solved by examining the crystals in various aspects: by directly studying the influence of individual chemical elements on their electrical properties [17]; by revealing the features of the effect of compensating impurities on the properties of semiconductors [18]; by analyzing the various variants of complexation in the volume of the crystals and the consequences to which they lead [19,20]; by investigating the anisotropy of the main electrophysical parameters of the crystals (that is, their discrepancy in the different crystallographic directions) [21]; by studying the changes in the electrical parameters of the crystals in fields of effective external action [12].…”

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

“…However, it should be noted that under study of semiconductors in conditions of strong deformation the galvanomagnetic measurements became widespread [11][12][13], while the experimental works devoted to the study of thermoelectric and thermomagnetic phenomena under these conditions appear quite rare [14,15]. The studies, especially at low temperatures in the region of drag effect of electrons by phonons, can provide information not only concerning the structure of the energy spectrum of carriers and the character of their scattering but also about the phonon-phonon interaction mechanism.…”