Features of the edge photoconductivity of gamma-irradiated layered crystals GaS and GaS:Yb under the strong electric field

Madatov, R. S.; Alekperov, A. S.; Gadzhieva, N. N.; Asadov, F. G.; Allahverdiev, Sh. A.; Asadov, E. G.; Naghiyev, T. G.

doi:10.1142/s0217979219500668

Cited by 21 publications

(1 citation statement)

References 10 publications

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“…The PL lines depicted in Figure 1 are mainly related to the Fermi level and defect states located in the center of the band gap. Photoluminescence spectra in this region (at 800-950nm) were also observed in our previous work [12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Resultssupporting

confidence: 82%

Photoluminescence and phonon spectrum studies of arsenide sulfide compound doped with rare earth elements

Asadullayeva,

Ahmedov,

Hadiyeva

et al. 2023

UNEC j. eng. appl. sci.

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The phonon spectrum and photoluminescence properties of (La2O3)0.05(As2S3)0.90(Er2O3)0.05 compound were studied in a broad aspect. The energy difference between the two-component maxima of photoluminescence located at the value of energy Е≈1.4eV was 41 meV, which corresponded to the energy of the most intense transverse optical (TO) phonon determined from the general radiation spectrum in the phonon spectrum region. In other words, the first photoluminescence line was observed simultaneously with the emission of a TO phonon with an energy of 41 meV. By changing the concentration of the erbium atom in different percentages in the infrared region of the spectrum and at the same time doping it with the lanthanum element, which plays the role of a sensitizer, a sharp increase in the intensity of photoluminescence was achieved in the intracentral (4J2/11-4J15/2) transition of the erbium atom. All these results show that the compound is suitable for wide application in various fields of optoelectronics.

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