Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy

Abstract

A self organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn delta doping of the GaAs buffer layer before QD growth with a layer concentration of 10 14 cm -2 leads to the for mation of an array of large QDs with variable composition In x Ga 1 -x As. The effect is explained within a model of In and Ga atom interdiffusion.