2002
DOI: 10.1070/qe2002v032n08abeh002277
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Features of the interaction of ultrashort laser pulses with a thin semiconductor film caused by the generation of excitons and biexcitons

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Cited by 29 publications
(6 citation statements)
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“…The physical reasons of the possibility of an almost instantaneous change in the value of the dielectric constant in the exciton region of the spectrum of semiconductors at high excitation levels are reported in [41][42][43][44][45]. Note that stepwise change in the dielectric permittivity in dependence on the amplitude of the electric field is observed in many crystals and materials in the exciton region of the spectrum at high intensities in the presence of exciton-exciton interactions, because of which biexcitons are formed.…”
Section: The Model Equationsmentioning
confidence: 91%
“…The physical reasons of the possibility of an almost instantaneous change in the value of the dielectric constant in the exciton region of the spectrum of semiconductors at high excitation levels are reported in [41][42][43][44][45]. Note that stepwise change in the dielectric permittivity in dependence on the amplitude of the electric field is observed in many crystals and materials in the exciton region of the spectrum at high intensities in the presence of exciton-exciton interactions, because of which biexcitons are formed.…”
Section: The Model Equationsmentioning
confidence: 91%
“…Thus, the photons of one and the same pulse induce step transitions from the ground state of the crystal to the exciton state. Then, it generates a transition from the exciton state to biexcitonic state, forming polarization of medium and concentration of quasiparticles, which determine the optical properties [36][37][38][39].…”
Section: The Model Equationsmentioning
confidence: 99%
“…A closed set of equations for positive frequency parts of the strength of the electric field E (+) σ (r, t) and macroscopic amplitudes of excitons α (+) σ (r, t) and biexcitons β (+) (r, t) is derived using Hamiltonian (11), ( 1)-( 4) and (12) (see [20,48]):…”
Section: The Model Choicementioning
confidence: 99%
“…Recent considerable advances in the manufacturing of dimensionally confined semiconductor structures have stimulated investigations of their nonlinear optical properties. In particular, in several works the interactions of resonance laser radiation with excitons and biexcitons in thin semiconductor films have been studied [1][2][3][4][5][6][7][8][9][10][11][12][13]. From a purely theoretical perspective, the thin-film approximation allows us to transform the set of nonlinear partial differential equations for the electromagnetic field and the polarization of the medium into a relatively simple set of ordinary differential equations, which admits exact analytical solutions in some cases.…”
Section: Introductionmentioning
confidence: 99%