2013
DOI: 10.1134/s0021364013080079
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Features of the structure and defect states in hydrogenated polymorphous silicon films

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Cited by 8 publications
(2 citation statements)
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“…In Figure 4a, the EPR spectra for P3HT samples in similar conditions are shown, both in the dark and under illumination. The EPR spectra are characterized by two overlapped signals: one is poorly resolved, with a g-factor equal to 2.0050 originating from the silicon dangling bonds [26], while the second one has an anisotropic form and is described by the following parameters: g 1 = 2.0030, g 2 = 2.0022, g 3 = 2.0013, extracted from computer simulation. The result of the computer simulation is shown in Figure 3b.…”
Section: Resultsmentioning
confidence: 99%
“…In Figure 4a, the EPR spectra for P3HT samples in similar conditions are shown, both in the dark and under illumination. The EPR spectra are characterized by two overlapped signals: one is poorly resolved, with a g-factor equal to 2.0050 originating from the silicon dangling bonds [26], while the second one has an anisotropic form and is described by the following parameters: g 1 = 2.0030, g 2 = 2.0022, g 3 = 2.0013, extracted from computer simulation. The result of the computer simulation is shown in Figure 3b.…”
Section: Resultsmentioning
confidence: 99%
“…Research addressed these issues in a variety of directions, particularly with regard to film deposition. By diluting the process gas(es) in hydrogen, and with appropriate adjustments to deposition parameters, other forms of a‐Si:H‐like materials, such as protocrystalline and polymorphous silicon can be obtained in the transition region between amorphous and microcrystalline silicon growth. These materials have, in general, different microstructure and void fraction from standard a‐Si:H, which offers the possibility of reducing defect density and light induced degradation, and also tuning the energy band gap.…”
Section: Amorphous Silicon – An Evolving Functional Materialsmentioning
confidence: 99%