FEI Titan 80-300 TEM

Thust, A.; Barthel, Juri; Tillmann, Karsten

doi:10.17815/jlsrf-2-66

Cited by 60 publications

(52 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some samples were further thinned by means of a Fischione NanoMill. TEM analysis of the cross sections was performed at a FEI Tecnai F20 TEM operated at 200 kV at the Central Facility for Electron Microscopy, RWTH Aachen University, and at the spherical aberration corrected FEI Titan 80-300 TEM operated at 300 kV at Ernst Ruska-Centre, Forschungszentrum Jülich [37].…”

Section: Characterizationmentioning

confidence: 99%

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4
König
¹
,
Wilck
²
,
Hiller
³

et al. 2019
Phys. Rev. Applied
10
2
43
0
1
View full text Add to dashboard Cite

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO2-vs. Si3N4-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO2 and the other in Si3N4. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO2-vs. Si3N4-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions. *

show abstract

Section: Characterizationmentioning

confidence: 99%

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4
König
¹
,
Wilck
²
,
Hiller
³

et al. 2019
Phys. Rev. Applied
10
2
43
0
1
View full text Add to dashboard Cite

show abstract

“…The elemental mapping using energy‐dispersive X‐ray spectroscopy (EDX) was conducted on a probe‐corrected FEI Titan 80–200 ChemiSTEM electron microscope equipped with four symmetrical SDD detectors . High‐resolution imaging was performed using a Cs‐image‐corrected FEI Titan transmission electron microscope operated at 300 kV . The nanoparticles were dispersed on ultra‐thin carbon films, supported on lacey carbon film Cu‐grids (Ted Pella, Inc.).…”

Section: Methodsmentioning

confidence: 99%

Deciphering the Surface Composition and the Internal Structure of Alloyed Silver–Gold Nanoparticles

Grasmik

Rurainsky

Loza

et al. 2018

Chemistry A European J

View full text Add to dashboard Cite

Spherical bimetallic AgAu nanoparticles in the molar ratios 30:70, 50:50, and 70:30 with diameters of 30 to 40 nm were analyzed together with pure silver and gold nanoparticles of the same size. Dynamic light scattering (DLS) and differential centrifugal sedimentation (DCS) were used for size determination. Cyclic voltammetry (CV) was used to determine the nanoalloy composition, together with atomic absorption spectroscopy (AAS), energy-dispersive X-ray spectroscopy (EDX) and ultraviolet-visible (UV/Vis) spectroscopy. Underpotential deposition (UPD) of lead (Pb) on the particle surface gave information about its spatial elemental distribution and surface area. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM) were applied to study the shape and the size of the nanoparticles. X-ray powder diffraction gave the crystallite size and the microstrain. The particles form a solid solution (alloy) with an enrichment of silver on the nanoparticle surface, including some silver-rich patches. UPD indicated that the surface only consists of silver atoms.

show abstract

“…All in situ TEM investigations were performed with an aberration-corrected FEI Titan transmission electron microscope equipped with aC s-probe corrector (CEOS Company), operated at 300 kV. [31] For the in situ TEM studies, about 12-15 superstructure particles were in the area of interest, but for clarity,o nly one is shown. The displayed particles are representative of the whole set of particles in the area of interest.…”

Section: Characterizationmentioning

confidence: 99%

Nanoscopic Porous Iridium/Iridium Dioxide Superstructures (15 nm): Synthesis and Thermal Conversion by In Situ Transmission Electron Microscopy

Pappert

Loza

Shviro

et al. 2019

Chemistry A European J

View full text Add to dashboard Cite

Porous particle superstructures of about 15 nm diameter, consisting of ultrasmall nanoparticles of iridium and iridium dioxide, are prepared through the reduction of sodium hexachloridoiridate(+IV) with sodium citrate/sodium borohydride in water. The water‐dispersible porous particles contain about 20 wt % poly(N‐vinylpyrrolidone) (PVP), which was added for colloidal stabilization. High‐resolution transmission electron microscopy confirms the presence of both iridium and iridium dioxide primary particles (1–2 nm) in each porous superstructure. The internal porosity (≈58 vol%) is demonstrated by electron tomography. In situ transmission electron microscopy up to 1000 °C under oxygen, nitrogen, argon/hydrogen (all at 1 bar), and vacuum shows that the porous particles undergo sintering and subsequent compaction upon heating, a process that starts at around 250 °C and is completed at around 800 °C. Finally, well‐crystalline iridium dioxide is obtained under all four environments. The catalytic activity of the as‐prepared porous superstructures in electrochemical water splitting (oxygen evolution reaction; OER) is reduced considerably upon heating owing to sintering of the pores and loss of internal surface area.

show abstract

FEI Titan 80-300 TEM

Cited by 60 publications

References 3 publications

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4
König
¹
,
Wilck
²
,
Hiller
³

et al. 2019
Phys. Rev. Applied
10
2
43
0
1
View full text Add to dashboard Cite

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4
König
¹
,
Wilck
²
,
Hiller
³

et al. 2019
Phys. Rev. Applied
10
2
43
0
1
View full text Add to dashboard Cite

Deciphering the Surface Composition and the Internal Structure of Alloyed Silver–Gold Nanoparticles

Nanoscopic Porous Iridium/Iridium Dioxide Superstructures (15 nm): Synthesis and Thermal Conversion by In Situ Transmission Electron Microscopy

Contact Info

Product

Resources

About

FEI Titan 80-300 TEM

Cited by 60 publications

References 3 publications

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4König1, Wilck2, Hiller3 et al. 2019Phys. Rev. Applied1024301View full textAdd to dashboardCite

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4König1, Wilck2, Hiller3 et al. 2019Phys. Rev. Applied1024301View full textAdd to dashboardCite

Deciphering the Surface Composition and the Internal Structure of Alloyed Silver–Gold Nanoparticles

Nanoscopic Porous Iridium/Iridium Dioxide Superstructures (15 nm): Synthesis and Thermal Conversion by In Situ Transmission Electron Microscopy

Contact Info

Product

Resources

About

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4
König
¹
,
Wilck
²
,
Hiller
³

et al. 2019
Phys. Rev. Applied
10
2
43
0
1
View full text Add to dashboard Cite

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4
König
¹
,
Wilck
²
,
Hiller
³

et al. 2019
Phys. Rev. Applied
10
2
43
0
1
View full text Add to dashboard Cite