2010 Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) 2010
DOI: 10.1109/primeasia.2010.5604896
|View full text |Cite
|
Sign up to set email alerts
|

FEM-based thermal analysis of IGBT

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
2
0

Year Published

2012
2012
2023
2023

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 12 publications
(3 citation statements)
references
References 3 publications
1
2
0
Order By: Relevance
“…As the power increases, the maximum and minimum temperature, and the difference between these two values at the surface increased. The result from module is close to the experiment [6] . FEM is a very useful tool for analyzing electric devices [7] , [8] .…”
Section: Introductionsupporting
confidence: 83%
“…As the power increases, the maximum and minimum temperature, and the difference between these two values at the surface increased. The result from module is close to the experiment [6] . FEM is a very useful tool for analyzing electric devices [7] , [8] .…”
Section: Introductionsupporting
confidence: 83%
“…[19][20][21][22][23] Even when voltage rises, the variance in the DC power produced by the solar cell proportionally rises with voltage and reaches the maximum point known as maximum power. 24,25 P m = V mpp* I mpp…”
Section: Modeling Of Pv With Maximum Power Pointmentioning
confidence: 99%
“…Therefore, the adoption of computer simulation has greatly shortened the time for choosing apposite parameters to meet the design specifications [1][2][3]. Furthermore, difficult issues encountered in technical flow and theoretical analyses have been solved, the funding and human resources have been greatly reduced.…”
Section: Introductionmentioning
confidence: 99%