2000
DOI: 10.1016/s0301-0104(99)00312-2
|View full text |Cite
|
Sign up to set email alerts
|

Femtosecond electron dynamics at the benzene/Ag(111) interface

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

9
47
1

Year Published

2000
2000
2012
2012

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 47 publications
(57 citation statements)
references
References 30 publications
9
47
1
Order By: Relevance
“…50,51,[55][56][57][58][59][60] However, in the case of dielectric spacer layers, the lifetimes of excited states show the dependence on the overlayer thickness distinct from the present results. Thus, for Xe/Ag(111) the decay rates of the n = 2 and n = 3 ISs hybridized with QWSs show an oscillating structure with increasing Xe coverage.…”
Section: Calculated Decay Ratescontrasting
confidence: 91%
See 2 more Smart Citations
“…50,51,[55][56][57][58][59][60] However, in the case of dielectric spacer layers, the lifetimes of excited states show the dependence on the overlayer thickness distinct from the present results. Thus, for Xe/Ag(111) the decay rates of the n = 2 and n = 3 ISs hybridized with QWSs show an oscillating structure with increasing Xe coverage.…”
Section: Calculated Decay Ratescontrasting
confidence: 91%
“…50,51,[55][56][57][58][59][60] However, the overlayer thickness dependence of the many-body decay rates of the hybrid states is qualitatively different. The smooth increase of γ j e-e with increasing overlayer thickness reported here has to be compared with the oscillating dependence found, e.g., for Xe/Ag(111), Kr/Cu(100), and Xe/Cu(100).…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…56). In contrast, the transient electronic states observed for benzene adsorbed on Cu (1 1 1) [291,292] and Ag(1 1 1) [293] are most likely modified image-potential states. For a more detailed discussion, the reader is referred to a recent review article by Zhu [294].…”
Section: Adsorbate Statesmentioning
confidence: 90%
“…On the femtosecond time scale, relevant processes in the context of semiconductors that have been studied with 2PPE include quantum well formation [6], nuclear motion [7,8], intraband scattering [9], and electron localization [10]. McNeill et al [6] reported the transition of an excited electron at the xenon/Ag(111) interface from populating an image potential state (IPS) to populating a quantum well derived from the bulk xenon conduction band.…”
Section: Two-photon Photoemissionmentioning
confidence: 99%