2021
DOI: 10.3390/mi13010014
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Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Abstract: The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectivity evolution obtained from dynamic images in combination with a theoretical Drude model and a Two-Temperature model provides new insights on material excitation and ablation process. For all fluences, the reflectiv… Show more

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Cited by 13 publications
(5 citation statements)
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“…First, undoped silicon wafers were cleaned with acetone, ethanol, and deionized water for 30 min to obtain a clean surface. The femtosecond laser (343 nm, 200 kHz, 280 fs (Light Conversion Pharos, Vilnius, Lithuania)) is tightly focused through a high numerical aperture objective lens (NA = 0.95, 40×) and matched with a three-dimensional piezoelectric platform (the strokes of the xand y-axes are 1.5 mm, that of the z-axis is 100 µm, and accuracy is 1 nm) to realize the preparation of micro/nanostructures on the silicon surface [24][25][26][27][28][29]. In addition, the femtosecond laser can also be used to process other materials via multi-photon absorption, for example, lift off GaN [30,31].…”
Section: Methodsmentioning
confidence: 99%
“…First, undoped silicon wafers were cleaned with acetone, ethanol, and deionized water for 30 min to obtain a clean surface. The femtosecond laser (343 nm, 200 kHz, 280 fs (Light Conversion Pharos, Vilnius, Lithuania)) is tightly focused through a high numerical aperture objective lens (NA = 0.95, 40×) and matched with a three-dimensional piezoelectric platform (the strokes of the xand y-axes are 1.5 mm, that of the z-axis is 100 µm, and accuracy is 1 nm) to realize the preparation of micro/nanostructures on the silicon surface [24][25][26][27][28][29]. In addition, the femtosecond laser can also be used to process other materials via multi-photon absorption, for example, lift off GaN [30,31].…”
Section: Methodsmentioning
confidence: 99%
“…It is essential to note that the dielectric function ε may comprise more terms than the simplified Eq. ( 4) typically used for describing excited semiconductors [17,18]. Most of the time, the two-photon absorption coefficient is neglected because the photon energy is greater than the bandgap of material.…”
Section: Semiconductors and Dielectricsmentioning
confidence: 99%
“…Unfortunately, these processes are complicated, and sometimes it is hard to control how pure the product is [4]. The process of using laser ablation to create nanoparticles (NPs) can be divided into two types: dry laser ablation and wet laser ablation [5].…”
Section: Introductionmentioning
confidence: 99%