Femtosecond laser-drilling-induced HgCdTe photodiodes

Abstract

Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be pn junction diodes by the laser beam induced current characterization as well as the conductivity measurement. Transmission and photoluminescence spectral measurements on a n-type dominated hole-array structure give rise to different results from those of an ion-milled sample.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

“…[10][11][12] Any nonuniformity specifications often limit the yield of devices in large HgCdTe-based infrared arrays, which results in low yields and high cost. Currently, laser-beam-induced-current (LBIC) microscopy, as a high-resolution, nondestructive optical technique, has been applied to measure the junction performance of each pixel in HgCdTe IRFPAs at an intermediate processing stage, [13][14][15][16] which could significantly promote efficiency and save costs. LBIC measurement can produce spatially resolved information about the properties of internal p-n junctions and electrically active defects.…”