Femtosecond laser hyperdoping and micro/nanotexturing of silicon for photovoltaics

Franta, Benjamin; Sher, Meng-Ju; Lin, Yuting; Phillips, Katherine C.; Mazur, Eric

doi:10.1117/12.908671

Cited by 4 publications

(3 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To obtain flat hyperdoped silicon using ultrafast laser irradiation, no more than approximately 10 pulses per site may be applied (larger pulse densities produce textures) [57,58]. The resulting dopant concentrations are typically in the range of 0.01–0.1 at.-%, peaking at the surface and decreasing to undetectable levels at depths of 10–100 nm [51,57].…”

Section: Ultrafast Laser Hyperdopingmentioning

confidence: 99%

Ultrafast laser processing of silicon for photovoltaics

Franta

Mazur

Sundaram

2017

International Materials Reviews

View full text Add to dashboard Cite

The photovoltaics market has been growing rapidly in the past decade or so, driven by policy support, growing economies of scale, and technological improvements. Continued advances in photovoltaics manufacturing and technologies may drive further cost reductions and facilitate market growth going forward. Here, we review one such potential advance: the use of ultrafast laser processing in silicon photovoltaic production. We provide an overview of the current major capabilities of ultrafast laser processing of silicon, including texturing, hyperdoping, and combined texturing and hyperdoping. We describe each process, survey recent advances, compare to alternative methods, and report the state-of-the-art of each process in relation to photovoltaic devices. We also discuss the major challenges facing each process. We close with a prospectus for research and applications. We conclude that there are no major technical obstacles to the application of ultrafast laser texturing to photovoltaics manufacturing currently, while ultrafast laser hyperdoping requires further research and development before adoption. We also show that the use of hyperdoping for intermediate band silicon photovoltaics likely requires concurrent surface texturing or other absorptionenhancement techniques to yield photoconversion efficiency improvements.

show abstract

Section: Ultrafast Laser Hyperdopingmentioning

confidence: 99%

Ultrafast laser processing of silicon for photovoltaics

Franta

Mazur

Sundaram

2017

International Materials Reviews

View full text Add to dashboard Cite

show abstract

“…optoelectronics [3][4][5][6][7][8][9]. One of the most promising and effective approaches to further extend the optical absorption of Si to the mid-and far-infrared ranges consists of introducing deep-level dopants (transition metals and chalcogens) into the Si bandgap at concentrations in excess of the solid solubility limit [10][11][12][13][14][15]. This leads to the formation of an intermediate band (IB) that allows for the strong room-temperature optical absorption of photons with energy lower than the Si band-gap.…”

Section: Introductionmentioning

confidence: 99%

Sub-band gap infrared absorption in Si implanted with Mg

Wang¹,

Shaikh²,

Kentsch³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Single-crystalline Mg-implanted Si layers are synthesized by ion implantation followed by pulsed laser melting. The Mg doping concentration is reaching 1021 cm-3. The Raman, Rutherford backscattering spectrometry/Channeling and particle induced X-ray emission measurements confirm the recrystallization of the Mg-implanted Si layer. The results reveal that Mg atoms are mostly located at the interstitial lattice sites of Si matrix. Besides, a strong below band gap infrared absorption over the wavelength range of 1.4-6.2 µm (0.2-0.87 eV, in the mid-infrared range) has been observed in the Mg-implanted Si layers. Moreover, a noticeable broad infrared optical absorption band emerges and peaks at around 0.73 eV, where the strength and width enhance with increasing Mg implantation concentration. The room-temperature sub-band gap absorption is associated with deep levels induced by Mg atoms at high implantation level. This work points out the potential of Mg-implanted Si for room-temperature light detection in a broad infrared range for the new generation of Si-based photonics.

show abstract

“…Specimens were irradiated by nanosecond laser pulses. To improve the material quality and thus device performance, thermal annealing and chemical etching after ultrafast texturing were performed on Si [17,18].…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic enhancement of Si micro- and nanostructure solar cells via ultrafast laser texturing

Mutlak¹

2014

Turk J Phys

View full text Add to dashboard Cite

Abstract:The purpose of the present study was to achieve laser-microtextured Si structures, the material used as silicon wafers, with a thickness of 330 µ m for a fast laser texturing technique, in order to produce micro-/nanosurface textures by means of a UV femtosecond laser. A textured silicon surface was prepared that has the capability to trap light, thereby greatly reducing the visible light reflection for photovoltaic cells. The textured surface was measured by scanning electron microscope. The results showed a photocurrent increase of about 25% in the laser-textured zones.

show abstract

Femtosecond laser hyperdoping and micro/nanotexturing of silicon for photovoltaics

Cited by 4 publications

References 23 publications

Ultrafast laser processing of silicon for photovoltaics

Ultrafast laser processing of silicon for photovoltaics

Sub-band gap infrared absorption in Si implanted with Mg

Photovoltaic enhancement of Si micro- and nanostructure solar cells via ultrafast laser texturing

Contact Info

Product

Resources

About