2006
DOI: 10.1103/physrevb.74.035329
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Fermi-edge singularities in transport through quantum dots

Abstract: We study the Fermi-edge singularity appearing in the current-voltage characteristics for resonant tunneling through a localized level at finite temperature. An explicit expression for the current at low temperature and near the threshold for the tunneling process is presented which allows to coalesce data taken at different temperatures to a single curve. Based on this scaling function for the current we analyze experimental data from a GaAs-AlAs-GaAs tunneling device with embedded InAs quantum dots obtained a… Show more

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Cited by 25 publications
(33 citation statements)
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“…11 and 12) as a function of the applied bias voltage V at zero temperature, with an exponent γ that is determined by the associated local perturbation. At nonzero temperatures T the singularity gets smeared and I T γ becomes a universal function of eV/k B T , 17 as has been demonstrated in numerous experiments. 17,18 In this work we focus on the realization of the x-ray edge problem in noninteracting quantum dots by means of optics experiments.…”
Section: Introductionmentioning
confidence: 54%
“…11 and 12) as a function of the applied bias voltage V at zero temperature, with an exponent γ that is determined by the associated local perturbation. At nonzero temperatures T the singularity gets smeared and I T γ becomes a universal function of eV/k B T , 17 as has been demonstrated in numerous experiments. 17,18 In this work we focus on the realization of the x-ray edge problem in noninteracting quantum dots by means of optics experiments.…”
Section: Introductionmentioning
confidence: 54%
“…53. Additionally, the non-Markovian correction due to strong spectral features in the Fermi edge singularity problem [128][129][130]132 is responsible for the observed discrepancy 131 between the measured Fano factor and the expected result based on the Markovian part only. A more detailed account of this problem will be presented elsewhere.…”
Section: -132mentioning
confidence: 89%
“…Coulomb interaction of conduction electrons in semiconductor heterostructures leads to a variety of manybody phenomena, such as fractional quantum Hall ground states [1,2], Kondo correlations [3][4][5][6] and Fermi edge singularities [7][8][9][10][11][12][13][14][15]. Fermi edge singularities have first been theoretically predicted for x-ray absorption in metals [16,17] and have been adapted to the case of electron tunnelling through an impurity (quantum dot) [7].…”
Section: Introductionmentioning
confidence: 99%