Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment

Kim, Iee-Gon; Choi, Kyoung Jin; Lee, Jong‐Lam

doi:10.1116/1.1868652

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…7h, which can significantly increase the surface state density of semiconductors by doping or introducing defects on their surface and lead to the increment of current density as a consequence. 19,31,32 Another study indicates that when the metal tip (Fe) slides on a smooth and rough silicon wafer, the rough interface will induce a higher leakage current and current density. This is attributed to the Fermi level pinning effect at the high surface state of the rough interface causing more charge carriers to bounce back.…”

Section: Semiconductorsmentioning

confidence: 99%

“…As the silicon samples are processed by inductively coupled plasma reactive ion etching (ICP-RIE), the density of states can be readily increased by doping or introducing defects on the semiconductor surfaces. 31,32 In addition, the triboelectric current characterized during the two semiconductor sliding process also increases with the load pressure. 19 All the above results indicate that the triboelectric current can be readily induced by the tribovoltaic effect in two steps.…”

Section: Microscopic Mechanisms Of Dc-tengs Based On the Tribovoltaic...mentioning

confidence: 99%

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Pursuing the tribovoltaic effect for direct-current triboelectric nanogenerators

Huo

et al. 2023

Energy Environ. Sci.

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Section: Semiconductorsmentioning

confidence: 99%

Section: Microscopic Mechanisms Of Dc-tengs Based On the Tribovoltaic...mentioning

confidence: 99%

Pursuing the tribovoltaic effect for direct-current triboelectric nanogenerators

Huo

et al. 2023

Energy Environ. Sci.

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“…In order to study the effect of the surface state density of the contact surface on the triboelectric current, they increased the surface state density of the silicon wafer by inductively coupled plasma‐reactive ion etching (ICP‐RIE) treatment. [ 101,102 ] The results showed that after ICP‐RIE treatment, the triboelectric current between tip and Si sample was obviously increase. These results were consistent with those predicted by the tribovoltaic effect.…”

Section: Applications In the Direct Current Teng Of C‐afmmentioning

confidence: 99%

Atomic Force Microscopy – A Powerful Tool for Studying Contact Electrification

Wang

Zhao

2022

Adv Materials Technologies

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Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

et al. 2020

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can be generated by the contact or sliding of a P-type semiconductor against an N-type semiconductor [7][8][9] (or semiconductor against metal [10][11][12] ), and a novel electric generator was proposed. [7] This new type of electric generator is gaining attention for that a direct current can be generated without a rectifier module. [8][9][10][11] However, the mechanism of the current generation in the CE involving semiconductors is still under debate.For the contact between a P-type semiconductor and an N-type semiconductor, the PN junction will be formed at the interface. [13,14] It is highly suspected that the built-in electric field in the PN junction makes the CE between the semiconductors different from that between conventional materials. Considering that, Wang et al. pointed out that the generation of the continuous direct current induced by the sliding of P-type semiconductor against N-type semiconductor is similar to the photovoltaic effect, and can be referred to as the "tribovoltaic effect." [15] The only difference is that the electron-hole pairs in tribovoltaic effect are excited during friction, in which the energy is released due to either the transition of electrons from the surface states of one side to that of another side in the contact or sliding, [16][17][18][19][20][21] or the energy released while forming a new bond at the interface, [22] just as it occurs in the CE between two conventional materials. [23][24][25][26] Then, the electron-hole pairs are separated by the built-in electric field and the external current flowing from the P-side to the N-side will be induced, as it occurs in the photovoltaic effect. [27][28][29] According to the tribovoltaic effect, the excitation efficiency of electron-hole pairs highly depends on the density of surface states of the semiconductors and the bonding interactions. Hence, the tribovoltaic current may be related to the density of surface states of the semiconductors and the sliding load, which can significantly affect the bonding interactions at the sliding interface. [22] In this work, the direct current is generated by sliding an N-type semiconductor tip over a Si sample surface using conductive atomic force microscopy (CAFM). [30,31] Both P-type and N-type Si samples with various doping concentrations are used in the experiments. Further, the Si samples are treated by inductively coupled plasma reactive ion etching (ICP-RIE), which can significantly increase the density of surface states of the semiconductors by doping or introducing defects on the surface. [32,33] It is revealed that the current density in the sliding experiments increases with increasing of the density of surface Contact electrification (CE or triboelectrification) is a common phenomenon, which can occur for almost all types of materials. In previous studies, the CE between insulators and metals has been widely discussed, while CE involving semiconductors is only recently. Here, a tribo-current is generated by sliding an N-type diamond coated tip on a P-type or N-type Si wafer...

show abstract

Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment

Cited by 5 publications

References 11 publications

Pursuing the tribovoltaic effect for direct-current triboelectric nanogenerators

Pursuing the tribovoltaic effect for direct-current triboelectric nanogenerators

Atomic Force Microscopy – A Powerful Tool for Studying Contact Electrification

Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

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