Fermi surface of a system with strong valence fluctuations: Evidence for a noninteger count of valence electrons in 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>EuIr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Götze, K.; Bergk, B.; Ignatchik, O.; Polyakov, A.; Kraft, Inga; Lorenz, Virginia O.; Rösner, H.; Förster, Tobias; Seiro, S.; Sheikin, I.; Wosnitza, J.; Geibel, C.

doi:10.1103/physrevb.105.155125

Phys. Rev. B

2022

DOI: 10.1103/physrevb.105.155125

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Fermi surface of a system with strong valence fluctuations: Evidence for a noninteger count of valence electrons in EuIr2Si2

K. Götze

B. Bergk

O. Ignatchik

et al.

Abstract: How to cite:Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

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Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films

Qiu,

Xiao,

et al. 2024

Applied Physics Letters

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The rare-earth Eu-based compounds with a unique half-filled 4f orbital have attracted an amount of research interest recently. Here, we synthesized EuTe(001) single-crystal thin films on SrTiO3(001) substrate via molecular beam epitaxy (MBE). The scanning tunneling microscopy and x-ray diffraction results indicate that the grown EuTe thin films orientated as EuTe[100]//SrTiO3[110] in plane. In the angle-resolved photoemission spectroscopic (ARPES) measurements, the grown EuTe films show a semiconductive band structure with the valence band maximum lying on the center point of the Brillouin zone. The bandgap size of EuTe was further identified by the optical transmission spectra as 2.2 eV. The antiferromagnetic transition temperature of the grown EuTe film is 10.5 K measured by a superconductive quantum interference device (SQUID). Our results provide important information on the fundamental electronic structures for the further research and applications of the Eu-based compounds.

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Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films

Qiu,

Xiao,

et al. 2024

Applied Physics Letters

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show abstract

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Fermi surface of a system with strong valence fluctuations: Evidence for a noninteger count of valence electrons in EuIr2Si2

Abstract: How to cite:Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 1 publication

References 48 publications

Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films

Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films

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