Fermi surface property of branch d in CeIn3

Change of the electronic states in CeIn3, CeRhIn5 and Ōnuki1, Settai2, Shishido3 et al. 2006Journal of Alloys and CompoundsSelf Cite

“…[5,8], the Fermi surface of CeIn 3 at ambient pressure is approximately similar to that of LaIn 3 , although it is strongly modified by the magnetic Brillouin zone boundaries. The dHvA frequency of branch "d", observed experimentally in the whole angle region, is in good agreement with the theoretical branch "d" of LaIn 3 in magnitude, although branch "d" in CeIn 3 corresponds to a nearly spherical Fermi surface, not possessing the slender arm along 1 1 1 as in LaIn 3 and is slightly large in volume of the Fermi surface compared to LaIn 3 .…”

“…Single crystals were grown by the Czochralski pulling method in an rf-furnace for CeIn 3 CeRhIn 5 , and the Bridgeman method and mineralization for CePt 3 Si [5][6][7]. The residual resistivity ratio RRR (=ρ RT /ρ 0 , ρ RT is the electrical resistivity at room temperature, ρ 0 is the residual resistivity) is 90 in CeIn 3 , 330 in CeRhIn 5 and 106 in CePt 3 Si, indicating high-quality samples.…”

“…We have studied a change of the electronic states in antiferromagnets CeIn 3 , CeRhIn 5 and CePt 3 Si via the de Haas-van Alphen (dHvA) experiments under pressure. The electronic states, which are tuned by pressure, have been investigated via challenging dHvA experiments.…”

Probing the Fermi surface by positron annihilation and Compton scattering

“…The theoretical model in which the f electrons were treated as localized core states produced a Fermi surface which was unambiguously more consistent with the positron experiment. When their 3D data were LCW-folded according the AF until cell (to simulate what might be observed in the AF phase), a Fermi surface emerges which is consistent with dHvA measurements 65 in the antiferromagnetic phase, leading Biasini et al to conclude that the f electrons remain localized. This conclusion has, however, been challenged by recent (dynamical mean field theory, DMFT) calculations.…”

Drastic change of the electronic states at the quantum critical point in heavy fermions

“…Single crystals were grown by the Czochralski pulling method in an RF-furnace for CeIn 3 , the in-flux method for CeRhIn 5 [10,11]. The residual resistivity ratio, RRR (¼ r RT =r 0 , r RT : the electrical resistivity at room temperature, r 0 : the residual resistivity) is 90 in CeIn 3 and 330 in CeRhIn 5 , indicating high-quality samples.…”