We have performed Ce L3-edge x-ray absorption spectroscopy (XAS) and Ce 4d-4f resonant photoemission spectroscopy (PES) on single crystals of CeO1−xFxBiS2 for x = 0.0 and 0.5 in order to investigate the Ce 4f electronic states. In the Ce L3-edge XAS, mixed valence of Ce was found in the x = 0.0 sample and the F-doping suppresses it, which is consistent with the results on polycrystalline samples. As for the resonant PES, we found that the Ce 4f electrons in both x = 0.0 and 0.5 systems respectively form a flat band at 1.0 eV and 1.4 eV below the Fermi level and there is no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS2 deviates from Ce 3+ even though Ce 4f electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce 4f in CeOBiS2 is mixed with the unoccupied Bi 6pz, which is consistent with the previous local structural study. Based on the analysis of the Ce L3-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller increasing the number of Ce 4f electrons upon the F substitution for O.