Ferrocene Bearing Non-ionic Poly-aryl Tosylates: Synthesis, Characterization and Electron Beam Lithography Applications

Reddy, Pulikanti Guruprasad; Moinuddin, Mohamad G.; Joseph, Aneesh M.; Nandi, Santu; Ghosh, Subrata; Pradeep, Chullikkattil P.; Sharma, Satinder K.; Gonsalves, Kenneth E.

doi:10.2494/photopolymer.31.669

Cited by 3 publications

(4 citation statements)

References 46 publications

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“…Resist C was adapted for these analyses with the expectation that the minimal effect of polarity change will reflect most because of the higher sensitivity than other resist formulations. The relation between the normalized remaining thickness (NRT) and exposer doses at different developer pH is shown in Figure a. − Figure a clearly shows that with changing the developer pH, the requirement of E D also varies gradually. However, more systematic investigations are required to understand the contrast curves.…”

Section: Resultsmentioning

confidence: 99%

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Peter

Moinuddin

Ghosh

et al. 2020

ACS Appl. Polym. Mater.

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Given the need for a next-generation technology node in the area of integrated circuits (ICs), improvement in the properties of resist materials, particularly sensitivity (E D ), resolution, good etch resistance, and low line edge/width roughness (LER/LWR), has been highly desirable but also extremely challenging. Herein, we report a series of organic− inorganic hybrid nonchemically amplified copolymer resists (n-CARs) bearing radiation-sensitive sulfonium functionality as well as tin metal as an organometallic unit in the structural backbone for low E D and LER/LWR. These resists have been synthesized by the free radical copolymerization of the organic monomer (4-(methacryloyloxy)phenyl)-dimethylsulfoniumtriflate (MAPDST) and acetyldibutylstannyl methacrylate (ADSM) in different feed ratios (97:3, 93:7, 88:12) and characterized using FT-IR, 1 H, 19 F NMR, GPC, XPS, and ICP-OES techniques. These MAPDST-co-ADSM copolymers exhibited molecular weights (M w ) in the range of 10 077−12 187 g mol −1 . Electron beam lithography (EBL) studies revealed that the negative tone n-CARs characteristic with patterning down to sub-15 nm features. The well-developed sub-15 nm nanofeatures showed low LER of ∼1.29 ± 0.07 line patterns (number belongs to feed ratio 93:7). The variable e-beam exposure dose study revealed that the E D of these resists varies with the percentage of incorporated Sn in the polymer matrix. Incorporation of 2.48 wt % Sn (feed ratio 88:12) in the polymer chain led to a significant enhancement in the E D (175 μC/cm 2 ). Furthermore, the mechanistic study of pattern development has been performed with electron beam reactivity analyses using the XPS technique. These investigations substantiate the potential candidature of developed resist formulation for next-generation semiconductor technology applications.

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Section: Resultsmentioning

confidence: 99%

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Peter

Moinuddin

Ghosh

et al. 2020

ACS Appl. Polym. Mater.

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“…Ferrocene-grafted organic-inorganic hybrids are an innovation category of homo polymeric resists, and the recently synthesized poly-(TPMA) and poly-(FEMA-CO-TPMA) were studied for their large-scale micro/nanolithographic functions [81]. These copolymers also behaved like light resists when exposed to an electron beam lithography device for arranging nano-marked characters.…”

Section: Electron Beam Lithographic Applicationmentioning

confidence: 99%

Contemporary Developments in Ferrocene Chemistry: Physical, Chemical, Biological and Industrial Aspects

Rauf,

Shabir,

Bukhari

et al. 2023

Molecules

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Ferrocenyl-based compounds have many applications in diverse scientific disciplines, including in polymer chemistry as redox dynamic polymers and dendrimers, in materials science as bioreceptors, and in pharmacology, biochemistry, electrochemistry, and nonlinear optics. Considering the horizon of ferrocene chemistry, we attempted to condense the neoteric advancements in the synthesis and applications of ferrocene derivatives reported in the literature from 2016 to date. This paper presents data on the progression of the synthesis of diverse classes of organic compounds having ferrocene scaffolds and recent developments in applications of ferrocene-based organometallic compounds, with a special focus on their biological, medicinal, bio-sensing, chemosensing, asymmetric catalysis, material, and industrial applications.

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“…A PBP composition containing ferrocene pendent group was reported to exhibit improved electron beam sensitivity and resolution compared to the composition without ferrocene group. 191,192 A resist concept using W and Mo polyoxometalates as pendent group in PBP composition has also been explored. 193 A recent report detailed doping of PBP resist with thiolated Ag nanoparticles that demonstrated improved sensitivity to electrons and lower LER for sub-15 nm features.…”

Section: Metal-containing Polymer-bound Pag Resistsmentioning

confidence: 99%

Section: Metal-containing Resists In Electron Beam Lithography: An Ov...mentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

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Ferrocene Bearing Non-ionic Poly-aryl Tosylates: Synthesis, Characterization and Electron Beam Lithography Applications

Cited by 3 publications

References 46 publications

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography

Contemporary Developments in Ferrocene Chemistry: Physical, Chemical, Biological and Industrial Aspects

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

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