Ferroelastic switching in a layered-perovskite thin film

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, X. F.; Tendeloo, Gustaaf Van; Chen, Lei; Nan, Ce Wen; Ramesh, R.; Zhang, Jinxing

doi:10.1038/ncomms10636

Cited by 109 publications

(93 citation statements)

References 53 publications

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“…It has potential merits of low switching power consumption as an AFM insulator as well as the longer retention time compared to the multiferroic switching via non-180° polar rotation which creates a significant ferroelastic strain with respect to surrounding regions [14,15].…”

Section: Introductionmentioning

confidence: 99%

Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: Insight into flexomagnetism

et al. 2017

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Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-

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Section: Introductionmentioning

confidence: 99%

Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: Insight into flexomagnetism

et al. 2017

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“…By choosing proper layer sizes and the insulator layer band gap, the tunneling current and the ON/OFF current ratio can be tuned simultaneously. In principle, all ferroelectric thin films with in-plane polarization can be used as the material platform to realize our proposal [20][21][22][23][24][25][26][27][28][29][30]. In particular, the recently discovered room-temperature IV-VI semiconductor thin films with robust in-plane polarization is an ideal candidate [25,26].…”

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confidence: 99%

In-Plane Ferroelectric Tunnel Junction

et al. 2019

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The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of random-access memory (RAM) based on ferroelectric thin films with the in-plane polarization called "in-plane ferroelectric tunnel junction". Apart from nonvolatility, lower power usage and faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of faster reading operation and non-destructive reading process, thus overcomes the write-after-read problem that widely exists in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films is a promising material platform to realize our proposal.To meet the daily increasing demands of modern electronic devices, especially of portable devices, memories with low energy consumption and high performance are highly desired. The current commercial dynamic random-access memories (DRAM) are volatile, which consume a large amount of energy to refresh the stored data in order to prevent leakage from the capacitor. To reduce the energy consumption, a non-volatile memory might be the ultimate solution [1,2].The ferroelectric material has been proposed to be an ideal candidate for non-volatile memories due to its electric switchable bistable ground states since 1952 [3], and ferroelectricity based non-volatile memories have been developed rapidly in the past several decades [4,5].Depending on the readout mechanism, ferroelectric non-volatile memories can be roughly classified into two generations. The first generation of ferroelectric RAM (FeRAM) uses polarized charges in the ferroelectric capacitor to represent the data [6][7][8]. As a result, discharging the capacitor to measure the polarized charge destroys the stored data, and the capacitor needs to be recharged after the reading operation. Limited by the destructive reading process, the ferroelectric size effects [9, 10] and various practical issues such as fatigue [11] and imprint [12], the market of FeRAM remains relatively small.To overcome the destructive readout problem, the second generation of ferroelectric tunnel junction (FTJ) is proposed to probe the ferroelectric polarization using the tunneling electroresistance effect [13][14][15]. The basic structure of the FTJ is a metal-ferroelectric-metal junction, where the tunneling potential barrier is determined by the out-of-plane polarization in the ferroelectric layer. In this way, the FTJ realizes bistable resistance states. The major challenge of realizing FTJ is to fabricate ultrathin ferroelectric films so that the tunneling current surpasses the threshold of peripheral amplifiers. The depolarization field induced by the out-of-plane polarization dramatically suppresses the ferroelectric critical temperature or even destroys the ferroelectricity when the films are too thin [16][17][18][19].In this work, we propose a new type of ferroelec-tric memo...

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“…With the increasing demand on thin-film devices and printed electronics, the complicated film-processing procedures of inorganic ferroelectrics hampered their development456, and increasing attentions have been attracted to molecular ferroelectrics due to their simple full-solution processing and low-cost film-making. In the past decade, studies on molecular ferroelectrics achieved great improvement and a series of new compounds have been discovered with spontaneous polarization and transition-temperature comparable or superior to those of inorganics7891011.…”

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confidence: 99%

Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions

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Tang

et al. 2017

Nat Commun

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Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.

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Ferroelastic switching in a layered-perovskite thin film

Cited by 109 publications

References 53 publications

Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: Insight into flexomagnetism

Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: Insight into flexomagnetism

In-Plane Ferroelectric Tunnel Junction

Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions

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