2004
DOI: 10.1557/proc-830-d2.5
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Ferroelectric 1-T memory device—will it be viable for nonvolatile memory applications?

Abstract: The quest for a nonvolatile memory FET based on the metal-ferroelectric-(insulator)semiconductor (MF(I)S) gate stack concept has greatly intensified in recent years. In principle, such a memory device (MF(I)S) could be a building block of an ideal memory technology which offers random access, high speed, low power, high density and non-volatility. In practice, however, none of the reported ferroelectric memory transistors has achieved a memory retention time of more than a few days so far. These results are a … Show more

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