Chemical doping has been widely applied to modify the lattice structure and functionalities in perovskite oxide layers. Here, the CaZrO 3 -doped (K 0.49 Na 0.49 Li 0.02 )(Ta 0.2 Nb 0.8 )O 3 films [i.e., KNNLT(1 − x)-CZx, with nominal doping levels x of CaZrO 3 selected at 0, 3, and 5%] are chosen to investigate how the structural instability, as well as dielectric and ferroelectric properties, changes with x. Compared to the undoped film, the introduction of CaZrO 3 suppresses the coexistence of tetragonal and orthorhombic phases, leaving the orthorhombic phase more favored at room temperature. With x increasing from 0 to 5%, the roomtemperature dielectric constant is improved by 60% (i.e., from 736 to 1183 at 1 kHz). On the other hand, the temperaturedependent dielectric constant reveals that the transition temperature T MIX-T , where the almost equivalently mixed phase turns into the high-temperature tetragonal-dominant phase on heating, is reduced with an increase in x. This suggests the doped CaZrO 3 can effectively reduce the energy barrier between the coexisting orthorhombic and tetragonal phases. More importantly, the ferroelectric nature is maintained up to 200 °C in all those samples, showing great application potentials in lead-free electronic devices with tunable structural stability.