Ferroelectric and magnetic properties of CdMnS films prepared by coevaporation

Abstract

We report on impurity ferroelectricity and ferromagnetic properties in semiconductor-structured CdMnS films. We observed ferroelectric hysteresis in CdMnS. A remnant polarization of 1.72 μC/cm2 and a coercive field of 14.3 kV/cm were obtained in samples with Mn concentration below 2%. The coevaporated CdMnS samples become ferromagnetic when doped with Au, with a spontaneous magnetization of 1.39×10−6 emu and a coercive magnetic field of 75.4 gauss at 10 K, and the Curie point was found to be higher than room temperature. Through magnetic force microscopy, we observed clear magnetic clusters with sizes ranging from a few nanometers to 102 nm, and found the magnetization to be highly dependent on Au concentration. A combination of this ferroelectricity in CdMnS and ferromagnetism in Au-doped CdMnS may find use in ternary bit nonvolatile memory devices.

Band gap engineering in PbS nanostructured thin films from near-infrared down to visible range by in situ Cd-doping

“…As the Cd concentration is increased, the diffraction peaks become broader due to a reduction in the grain size [11]. Similar results are reported for Mn-doped CdS films [11,12]. The value of D calculated for PbCdS films was found to be in the range of 9-11 nm.…”

Switching on Antiferromagnetic Coupled Superparamagnetism by Annealing Ferromagnetic Mn/CdS Nanoparticles

“…Only a few show ferromagnetism at room temperature . On the other hand, many examples of the Mn/CdS are known to exhibit ferromagnetic properties around cryogenic temperatures. , More often, manganese-doped CdS and CdSe have been reported to exhibit superparamagnetism or antiferromagnetism coupled superparamagnetism at low temperature.…”

Structural and optical characterization of InAs nanocrystals deposited by spray pyrolysis

“…It is observed that the increase in both deposition time and temperature yield as slight decrease in band gap from 3.88 eV to 3.81 eV. This could be attributed to the quantum size effects [7,8]. (b)deposition time.…”