Ferroelectric Bi3.4Eu0.6Ti3O12 thin films deposited on Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol–gel process

Electrical properties of Nd-substituted Bi4Ti3O12 thin films fabricated by chemical solution deposition

“…However, SBT suffers from some disadvantages, such as very low switchable remanent polarization values and high processing temperatures. Very recent studies revealed that Bi 3+ ions in Bi 4 Ti 3 O 12 structure could be substituted by trivalent rare-earth ions, such as La 3+ , Sm 3+ , Pr 3+ , Eu 3+ and Nd 3+ , for the improvement of its electrical properties [3][4][5][6][7]. They are attractive lead-free materials for memories applications because they have large 2P r and high fatigue resistance on common Pt electrodes, which make them applicable to direct commercialization.…”

Structure of sol-gel prepared ferroelectric Bi3.4La0.6Ti3O12

“…Among them, lanthanide doped Bi 4 Ti 3 O 12 (BIT) thin films have been extensively investigated, since they exhibit several advantages, such as a large remanent polarization, a good fatigue resistance, and a relatively low processing temperature [4][5][6][7][8][9].…”

Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate

“…The MFS-FET type is more promising than the ferroelectric random access memory (FeRAM) using a metal-ferroelectric-metal (MFM) structure [6]. MFS-FET, in which, a spontaneous polarization of ferroelectric films is used as a gate insulator, have the potential advantages of high switching speed, nonvolatile data storage, radiation tolerance and high density [7].…”