2014
DOI: 10.1007/s00339-014-8590-1
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Ferroelectric characteristics of MFIS structure with P(VDF–TrFE)/BaTiO3 nanocomposite as ferroelectric layer

Abstract: A metal-ferroelectric-insulator-semiconductor (MFIS) structure has been made using poly(vinylidene difluoride-trifluoroethylene)/barium titanate [P(VDF-TrFE)/ BaTiO 3 ] nanocomposite as ferroelectric layer, on silicon/ silicon dioxide (Si/SiO 2 ) substrate. Different concentrations of BaTiO 3 were added to P(VDF-TrFE) polymer using bath sonication method, and the films were prepared using spin coating method. The structure was annealed to 120°C for 2 h and then the top aluminium electrode was deposited by ther… Show more

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Cited by 3 publications
(2 citation statements)
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“…P(VDF-TrFE) with 1% BaTiO 3 nanoparticle [P(VDF-TrFE)/BaTiO 3 polymer nanocomposite (PT-BT)] were prepared by 6 hours sonication and the same solution was used as ferroelectric layer for FeCAP and FeFET. [29,30] For the FeCAP fabrication, the p-type doped 2 in. silicon wafer (100) having a resistivity 1-5 Ωcm, were used as a substrate material.…”
Section: Materials and Ferroelectric Field Effect Capacitor (Fecap) Fabricationmentioning
confidence: 99%
See 1 more Smart Citation
“…P(VDF-TrFE) with 1% BaTiO 3 nanoparticle [P(VDF-TrFE)/BaTiO 3 polymer nanocomposite (PT-BT)] were prepared by 6 hours sonication and the same solution was used as ferroelectric layer for FeCAP and FeFET. [29,30] For the FeCAP fabrication, the p-type doped 2 in. silicon wafer (100) having a resistivity 1-5 Ωcm, were used as a substrate material.…”
Section: Materials and Ferroelectric Field Effect Capacitor (Fecap) Fabricationmentioning
confidence: 99%
“…The impact of BaTiO 3 nanoparticles (particle size less than 100 nm) over the ferroelectric properties of thin P(VDF-TrFE) films was reported in our previous works. [29,30] In this work, ferroelectric capacitor (FeCAP) devices were fabricated and characterized using P(VDF-TrFE),BaTiO 3 [PT-BT] polymer nanocomposite. In order to understand the effect of these polymer composite, capacitor devices with different dielectric stacks such as Al/Si/SiO 2 /PT-BT/Al, Al/Si/SiO 2 /Al, Al/Si/PT-BT/Al and Al/Si/SiO 2 /PT/Al were fabricated.…”
Section: Introductionmentioning
confidence: 99%