Ferroelectric control of magnetism in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ba</mml:mi><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow></mml:math>heterostructures via interface strain coupling

Sahoo, Sarbeswar; Polisetty, Srinivas; Duan, Chun‐Gang; Jaswal, S. S.; Tsymbal, Evgeny Y.; Binek, Christian

doi:10.1103/physrevb.76.092108

Cited by 328 publications

(232 citation statements)

References 33 publications

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“…A large magnetic response of La 2/3 Sr 1/3 MnO 3 was found to be associated with changes in the BaTiO 3 FE domain structure in an electric field. Similar studies demonstrated reversible changes in the magnetic properties of an Fe thin film deposited on a BaTiO 3 single crystal [108]. Strainmediated large magnetization changes emerged in response to FE switching and structural transitions of BaTiO 3 controlled by applied electric fields and temperature.…”

Section: Ii) Epitaxial Structuresmentioning

confidence: 59%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: Ii) Epitaxial Structuresmentioning

confidence: 59%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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“…12 Ferroelectrics offer a convenient source of large, switchable electric fields, as well as satisfying the need for low power consumption, nonvolatile devices in the realization of electrically controlled magnetic memories. Typically, however, the strain coupling of the magnetic and electrical order parameters 13,14 in ferroelectric/ferromagnetic heterostructures overwhelms the experimental investigation of more subtle magnetoelectric effects. 15 To explore the effects of electric field penetration into a metallic ferromagnet, we fabricated a heterostructure of a stiff metallic ferromagnet, Co, with a soft copolymer ferroelectric, P(VDF-TrFE) consisting of 70% vinylidene fluoride with 30% trifluoroethylene, with bulk stiffness coefficients on the order of 10 11 and 10 9 N/m 2 , respectively.…”

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confidence: 99%

Ferroelectric Control of Magnetic Anisotropy

2011

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We demonstrate unambiguous evidence of the electric field control of magnetic anisotropy in a wedge-shaped Co film of varying thickness. A copolymer ferroelectric of 70% vinylidene fluoride with 30% trifluoroethylene, P(VDF-TrFE) overlays the Co wedge, providing a large switchable electric field. As the ferroelectric polarization is switched from up to down, the magnetic anisotropy of the Co films changes by as much as 50%. At the lowest Co thickness the magnetic anisotropy switches from out-of-plane to in-plane as the ferroelectric polarization changes from up to down, enabling us to rotate the magnetization through a large angle at constant magnetic field merely by switching the ferroelectric polarization. The large mismatch in the stiffness coefficients between the polymer ferroelectric and metallic ferromagnet excludes typical magnetoelectric strain coupling; rather, the magnetic changes arise from the large electric field at the ferroelectric/ferromagnet interface.

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“…In these composites an applied electric field induces strain in the piezoelectric constituent, which is mechanically transferred to the magnetostrictive constituent. [6][7][8] Another approach is to realize a purely electronic mechanism, where the response of a ferromagnet to an applied electric field is driven by spin-dependent screening. 9 Mediated by this mechanism the electric field was predicted to induce a net magnetic moment at the interface and to alter the magnetocrystalline anisotropy (MCA) of thin magnetic films.…”

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confidence: 99%

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

et al. 2012

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Electric field control of magnetization is one of the promising avenues for achieving high-density energy-efficient magnetic data storage. Ferroelectric materials can be especially useful for that purpose as a source of very large switchable electric fields when interfaced with a ferromagnet. Organic ferroelectrics, such as poly(vinylidene fluoride) (PVDF), have an additional advantage of being weakly bonded to the ferromagnet, thus minimizing undesirable effects such as interface chemical modification and/or strain coupling. In this work we use first-principles density functional calculations of Co/PVDF heterostructures to demonstrate the effect of ferroelectric polarization of PVDF on the interface magnetocrystalline anisotropy that controls the magnetization orientation. We show that switching of the polarization direction alters the magnetocrystalline anisotropy energy of the adjacent Co layer by about 50%, driven by the modification of the screening charge induced by ferroelectric polarization. The effect is reduced with Co oxidation at the interface due to quenching the interface magnetization. Our results provide a new insight into the mechanism of the magnetoelectric coupling at organic ferroelectric/ferromagnet interfaces and suggest ways to achieve the desired functionality in practice.

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Ferroelectric control of magnetism inBaTiO3∕Feheterostructures via interface strain coupling

Cited by 328 publications

References 33 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Ferroelectric Control of Magnetic Anisotropy

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

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