2018
DOI: 10.1021/acs.nanolett.7b04829
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Ferroelectric Control of the Spin Texture in GeTe

Abstract: The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric contr… Show more

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Cited by 148 publications
(150 citation statements)
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“…Both possess spontaneous electric polarization P parallel to [111] direction, but the high Curie temperature of GeTe (T C = 700 K) 12,13 allowed in-depth experimental studies of the ferroelectric phase which proved the polarization switching, 14 electronic structures [15][16][17] and reversible Rashba spin textures. 18 Importantly, spinto-charge conversion has been recently measured via spin pumping experiments in Fe/GeTe bilayers demonstrating high potential of such interfaces for multifunctional spintronics applications. 19,20 On the other hand, ferroelectric phase of SnTe (T C = 100 K) 21 has been known mainly from the theoretical side.…”
Section: Introductionmentioning
confidence: 99%
“…Both possess spontaneous electric polarization P parallel to [111] direction, but the high Curie temperature of GeTe (T C = 700 K) 12,13 allowed in-depth experimental studies of the ferroelectric phase which proved the polarization switching, 14 electronic structures [15][16][17] and reversible Rashba spin textures. 18 Importantly, spinto-charge conversion has been recently measured via spin pumping experiments in Fe/GeTe bilayers demonstrating high potential of such interfaces for multifunctional spintronics applications. 19,20 On the other hand, ferroelectric phase of SnTe (T C = 100 K) 21 has been known mainly from the theoretical side.…”
Section: Introductionmentioning
confidence: 99%
“…1. Even though the Rashba effect is generally associated to heterostructures and surfaces, as due to 2D structural inversion asymmetry, a giant Rashba effect has been recently observed in bulk polar/ferroelectric systems [19][20][21][22][23] . Sometimes, Dresselhaus and Rashba terms coexist 24 , giving rise to interesting physics and novel applications.…”
mentioning
confidence: 99%
“…It has been considered as a strong contender for the next-generation memory technology as the material exhibits different physical, electrical and optical properties when it is in amorphous and crystal phases [16][17][18][19][20][21]. GeTe can also be made into dilute magnetic semiconductor, which is an important material for spintronics devices [15,22,23]. If the unique storage and computing features of GeTe can be integrated to develop novel devices, this will lead to significant advancement in the computing technology.…”
Section: Introductionmentioning
confidence: 99%