Ferroelectric Devices

Gevorgian, Spartak; Deleniv, A.

doi:10.1007/978-1-84882-507-9_5

Cited by 5 publications

(1 citation statement)

References 81 publications

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“…Oxygen vacancies are the most common in perovskites. 2 In agile microwave devices (i.e., varactors, film bulk acoustic wave resonators, FBARs) based on paraelectric phase ferroelectrics, the oxygen vacancies cause high RF and DC leakages currents, microwave losses, 3 and distortion (hysteresis) of C-V, 4,5 tand-V, 6 and I-V (Ref. 7) dependencies.…”

Section: Introduction: Negative Effects Of the Oxygen Vacancies Inmentioning

confidence: 99%

Dielectric model of point charge defects in insulating paraelectric perovskites

Buniatian

Martirosyan

Vorobiev

et al. 2011

Journal of Applied Physics

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Some point defects (i.e., oxygen vacancies) create deep trapping levels in the bandgap of the paraelectric phase ferroelectric crystals. Under applied DC field the traps release electrons via the Poole-Frenkel mechanism and become charged. The electric field of a point charge polarizes the crystal locally reducing its permittivity. In this paper a simple theory is proposed for calculating the DC field dependent apparent (measureable) permittivity of a paraelectric crystal with point charge defects. It is shown that the apparent permittivity of a paraelectric crystal may be sufficiently lower as compared with the defectless crystal. This reduction is in addition to the possible reduction of the apparent permittivity associated with the interfacial "dead" layers and strain.

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Section: Introduction: Negative Effects Of the Oxygen Vacancies Inmentioning

confidence: 99%

Dielectric model of point charge defects in insulating paraelectric perovskites

Buniatian

Martirosyan

Vorobiev

et al. 2011

Journal of Applied Physics

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Functional Tantalum‐based Oxides: From the Structure to the Applications

Złotnik

Tkach

Vilarinho

2016

Advanced Ceramic Materials

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Large polarization gradients and temperature-stable responses in compositionally-graded ferroelectrics

Damodaran

Pandya

et al. 2017

Nat Commun

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A range of modern applications require large and tunable dielectric, piezoelectric or pyroelectric response of ferroelectrics. Such effects are intimately connected to the nature of polarization and how it responds to externally applied stimuli. Ferroelectric susceptibilities are, in general, strongly temperature dependent, diminishing rapidly as one transitions away from the ferroelectric phase transition (TC). In turn, researchers seek new routes to manipulate polarization to simultaneously enhance susceptibilities and broaden operational temperature ranges. Here, we demonstrate such a capability by creating composition and strain gradients in Ba1−xSrxTiO3 films which result in spatial polarization gradients as large as 35 μC cm−2 across a 150 nm thick film. These polarization gradients allow for large dielectric permittivity with low loss (ɛr≈775, tan δ<0.05), negligible temperature-dependence (13% deviation over 500 °C) and high-dielectric tunability (greater than 70% across a 300 °C range). The role of space charges in stabilizing polarization gradients is also discussed.

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Ferroelectric Devices

Cited by 5 publications

References 81 publications

Dielectric model of point charge defects in insulating paraelectric perovskites

Dielectric model of point charge defects in insulating paraelectric perovskites

Functional Tantalum‐based Oxides: From the Structure to the Applications

Large polarization gradients and temperature-stable responses in compositionally-graded ferroelectrics

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