Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer 
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Xiao, Zhiyong; Song, Jingfeng; Ferry, D. K.; Ducharme, Stephen; Hong, Xia

doi:10.1103/physrevlett.118.236801

Cited by 65 publications

(37 citation statements)

References 45 publications

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“…To switch the FE polarization in P(VDF-TrFE), an AFM system is employed for the facile reconfiguration of polarization pattern, as reported in the literature 22 . Despite the switched FE polarization tends to relax due to the incomplete compensation to depolarization field in P(VDF-TrFE), it enables rewritable polarization pattern on the same device, thereby allowing the direct study of the influence of device configurations without worrying about material differences.…”

Section: Resultsmentioning

confidence: 99%

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

et al. 2019

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Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS 2 ) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W −1 and detectivity over 10 13 Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.

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Section: Resultsmentioning

confidence: 99%

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

et al. 2019

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“…[ 8,9 ] To push forward their applications in next generation electronics, great efforts have been put into controlling and improving device properties, such as metal‐semiconductor interface with low contact potential, [ 10,11 ] fast on/off switching speed, [ 12,13 ] and controlled doping. [ 14–20 ]…”

Section: Introductionmentioning

confidence: 99%

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Zhu

Zhao

Wang

et al. 2021

Adv Funct Materials

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Carrier doping is the basis of the modern semiconductor industry. Great efforts are put into the control of carrier doping for 2D semiconductors, especially the layered transition metal dichalcogenides. Here, the direct laser patterning of WSe 2 devices via light-induced hole doping is systematically studied. By changing the laser power, scan speed, and the number of irradiation times, different levels of hole doping can be achieved in the pristine electron-transport-dominated WSe 2 , without obvious sample thinning. Scanning transmission electron microscopy characterization reveals that the oxidation of the laser-radiated WSe 2 is the origin of the carrier doping. Photocurrent mapping shows that after the same amount of laser irradiation, with increasing thickness, the laser patterned PN junction changes from the pure lateral to the vertical-lateral hybrid structure, accompanied by the decrease in the open circuit voltage. The vertical-lateral hybrid PN junction can be tuned to a pure lateral one by further irradiation, showing possibilities to construct complex junction profiles. Moreover, a NOR gate circuit is demonstrated by direct patterning of p-doped channels using laser irradiation without introducing passive layers and metal electrodes with different work functions. This method simplifies device fabrication procedures and shows a promising future in large scale logic circuit applications.

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“…In order to study the transport mechanism of carriers in the MoS 2 channel, it is necessary to calculate the 2D charge density. Density of electrons and holes (σ e and σ p ) is obtained from [ 30–33 ]

σ = \frac{G}{μ_{e}}

where e is the charge of an electron and G is the conductance of MoS 2 channel at V bg = 0 V. The density of electrons and holes as a function of V sg is shown in Figure 2d. On both sides of Figure 2d, the carrier densities of electrons and holes are saturated, reaching about 9 × 10 13 and 8.85 × 10 13 cm −2 , respectively.…”

Section: Figurementioning

confidence: 99%

Multifunctional MoS₂ Transistors with Electrolyte Gel Gating

Wang

Tang

et al. 2020

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MoS2, one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS2, which is dominated by electron transport, is always a challenge. Here, MoS2 transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 105, and a low subthreshold swing below 50 mV per decade. Due to the electrolyte gel, the density of electrons and holes in the MoS2 channel reaches ≈9 × 1013 and 8.85 × 1013 cm−2, respectively. The electrolyte gel‐assisted MoS2 phototransistor exhibits adjustable positive and negative photoconductive effects. Additionally, the MoS2 p–n homojunction diode affected by electrolyte gel shows high performance and a rectification ratio over 107. These results demonstrate that modifying the conductance of MoS2 through electrolyte gel has great potential in highly integrated electronics and optoelectronic photodetectors.

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Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2

Cited by 65 publications

References 45 publications

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Multifunctional MoS₂ Transistors with Electrolyte Gel Gating

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Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2

Cited by 65 publications

References 45 publications

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

Direct Laser Patterning of a 2D WSe2 Logic Circuit

Multifunctional MoS2 Transistors with Electrolyte Gel Gating

Contact Info

Product

Resources

About

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Multifunctional MoS₂ Transistors with Electrolyte Gel Gating