Ferroelectric, electrical and magnetic properties of Cr, Mn, Co, Ni, Cu added polycrystalline BiFeO3 films

Naganuma, Hiroshi; Miura, Jun; Okamura, Soichiro

doi:10.1063/1.2965799

Cited by 238 publications

(113 citation statements)

References 13 publications

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“…Although P r is still not saturated, E c tends to saturate at 1250 kV/cm. Since the observed electric field dependences of P r value are almost comparable with those of polycrystalline pure BFO film capacitors measured by low temperature or high-speed positive-up-negative-down measurements, 10,16 degradations of ferroelectric properties due to ion doping are almost nothing. Hence, it is concluded that ͑Mn, Ti͒ codoping in the BFO film is an effective technique leading to the excellent ferroelectric properties at RT without any serious degradations.…”

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confidence: 58%

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Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Kawae¹,

Terauchi²,

Tsuda³

et al. 2009

Applied Physics Letters

235

102

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Polycrystalline BiFeO 3 ͑BFO͒, Ti-doped BFO, Mn-doped BFO, and ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films were fabricated on Pt/ SrTiO 3 ͑100͒ substrate by pulsed laser deposition. Observed leakage current behavior in those ion-doped BFO films indicated the dominance of space-charge-limited current in the high electric field region. The leakage current of the BFMT film was much reduced in relation to the other films due to the formation of deep traps. In the BFMT film, well saturated P-E hysteresis curves were observed. Remanent polarization and coercive field for maximum electric field of 2100 kV/cm were 75 C / cm 2 and 310 kV/cm, respectively. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3098408͔ Excellent ferro-/piezoelectric properties have been reported in the BiFeO 3 ͑BFO͒ thin films comparable to those of Pb͑Zr x Ti 1−x ͒O 3 , 1-3 and thus the BFO is expected as an alternative Pb-free ferro-/piezoelectric material. However, the large leakage current of BFO thin films at room temperature ͑RT͒ is known to be a serious problem, which could limit the various applications of this material.In the past several years, site-engineering technique by substitution of small amount of impurities was proposed to solve this problem, and reduced leakage current properties were reported. [4][5][6][7][8][9][10][11]15 The site-engineering technique is quite important from industrial aspects because this technique can be applied to most deposition methods. However, it is not easy to reduce the leakage current of BFO films by a single ion-doping method since the excess substitution causes an increase in leakage current in the films. 6,7 Besides, modification of electrical properties of BFO films by ion doping at Bi site is quite difficult because of the degradations in ferroelectric properties, although rare-earth elements doped at Bi site is effective to reduce the impurity phases due to bismuth and oxygen vacancies. 5,8,9 Therefore, we propose a new combination of Mn and Ti as codoping elements for Fe site of BFO thin films. In this work, we report the synthesis and characterization of ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films by comparing with those of pure BFO, Ti-doped BFO ͑BFT͒, and Mn-doped BFO ͑BFM͒ thin films. Moreover, it is required to reduce the leakage current of BFO films in the high electric field region ͑at least more than 400 kV/cm͒ since coercive electric fields of BFO film capacitors are generally 300-500 kV/cm. Hence, we also discuss the change in conduction mechanism in the high electric field region by ion doping in the BFO thin films.BFO, BFT, BFM, and BFMT thin films were deposited on Pt-coated ͑100͒ SrTiO 3 ͑STO͒ substrates with thicknesses ranging from 220 to 240 nm, using a conventional pulsed laser deposition ͑PLD͒ system. The ceramic targets with metal compositions of Bi 1.1 FeO 3 , Bi͑Fe 0.98 Ti 0.02 ͒O 3 , Bi 1.1 ͑Fe 0.97 Mn 0.03 ͒O 3 , and Bi͑Fe 0.95 Mn 0.03 Ti 0.02 ͒O 3 were used for deposition of BFO, BFT, BFM, and BNFM films, respectively. The details of thin film fabrication were described...

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confidence: 58%

“…[4][5][6][7][8][9][10][11]15 The site-engineering technique is quite important from industrial aspects because this technique can be applied to most deposition methods. However, it is not easy to reduce the leakage current of BFO films by a single ion-doping method since the excess substitution causes an increase in leakage current in the films.…”

mentioning

confidence: 99%

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Kawae¹,

Terauchi²,

Tsuda³

et al. 2009

Applied Physics Letters

235

102

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“…Both Bi-and Fe-site substitutions with a variety of cations have been attempted in BFO thin film. [14][15][16][17][18][19][20][21] Nevertheless, ferroelectric and magnetic behaviors of the substituted BFO thin films have great discrepancy across many research reports. The (La, Mn) co-substituting has been proposed as a promising strategy to simultaneously optimize ferroelectric and ferromagnetic properties, [22][23][24] but the cosubstitution effects of La and Mn on BFO so far have only been examined in form of polycrystalline thin films with rather scattered physical properties.…”

Section: Introductionmentioning

confidence: 99%

Multiferroism in orientational engineered (La, Mn) co-substituted BiFeO3 thin films

Wang¹,

Chan²,

Zheng³

et al. 2011

Journal of Applied Physics

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“…Many research groups have reported that a site-engineering technique using various elements is effective to suppress the leakage current in BFO films. [11][12][13][14][15][16] We proposed (Nd,Mn)-codoped BFO (BNFM) and (Pr,Mn)-codoped BFO (BPFM), and succeeded in obtaining improved electrical properties. 14,[17][18] Recently, polarization-induced photovoltaic properties in BFO films have been reported.…”

Section: Introductionmentioning

confidence: 99%

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO₃ Ferroelectric Thin Films

Ukai

Yamazaki

Kawae

et al. 2012

Jpn. J. Appl. Phys.

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Nd-doped BiFeO 3 (BNF) thin films were fabricated on SrRuO 3 (SRO)-coated (100) Nb-doped SrTiO 3 substrates by pulsed laser deposition, and nondoped BiFeO 3 (BFO) thin films were also fabricated similarly for comparison. Then, Nd-doping effects on ferroelectric and photovoltaic properties were evaluated. Polarization-induced photovoltaic effects were observed in both the BFO and BNF solar cell structures with top and bottom electrodes under intense laser illumination. Using Au top electrodes, enhanced photovoltaic properties were observed in the BNF cell compared with the BFO cell. To improve the photovoltaic properties of the BNF cell, instead of the Au top electrodes, In-Sn-O (ITO) top electrodes were employed for the BNF cell. As a result, the photovoltaic properties were found to be markedly improved, resulting in an open circuit voltage of 0.81 V and a short circuit current density of 12.1 mA/cm 2 .

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Ferroelectric, electrical and magnetic properties of Cr, Mn, Co, Ni, Cu added polycrystalline BiFeO3 films

Cited by 238 publications

References 13 publications

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Multiferroism in orientational engineered (La, Mn) co-substituted BiFeO3 thin films

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO₃ Ferroelectric Thin Films

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Ferroelectric, electrical and magnetic properties of Cr, Mn, Co, Ni, Cu added polycrystalline BiFeO3 films

Cited by 238 publications

References 13 publications

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Multiferroism in orientational engineered (La, Mn) co-substituted BiFeO3 thin films

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO3 Ferroelectric Thin Films

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Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO₃ Ferroelectric Thin Films