Ferroelectric Field Effect Control of Magnetism in Multiferroic Heterostructures

Electric field control of magnetism in multiferroic heterostructures

“…The process is found to depend on the duration of the voltage pulse, which controls the velocity of the ferroelectric domain wall displacement, and responses down to the picosecond range could in principle be achieved [391]. In charge-mediated PZT/LSMO multiferroic heterostructures, the magnetoelectric coupling is expected to be fast and limited by the response of the ferroelectric component [89,278,488]. This is supported by transport measurements carried out in similar heterostructures that show switching times down to the microsecond time scale limited by the RC time constant of the device [170].…”

“…Interfacial strain has been used successfully to achieve a strong coupling between magnetic and electrical order parameters [11,35,[71][72][73][74]; the magnetoelectric coupling is indirect, but can be optimized to yield large magnetoelectric responses by a suitable choice of the material components and device geometry [25,[75][76][77]. Other coupling mechanisms have been explored successfully, including through exchange anisotropy [78,79], an effect which arises at the interface between an antiferromagnet and a ferromagnet as a consequence of the exchange interaction between the uncompensated spins of the antiferromagnetic interface with the spins of the ferromagnet [80][81][82][83][84][85][86][87][88]; and through charge-mediated couplings, where charge screening at the ferroelectric-metallic ferromagnetic interface leads to changes in the carrier density and in the magnetic properties of the ferromagnetic system [63,73,89]. The magnetoelectric response expected from these different types of coupling are schematically shown in figures 1(a)-(c), together with the effect on the magnetic hysteresis curves (d)-(g).…”