Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

Mathews, Scott A.; Ramesh, R.; Venkatesan, T.; Benedetto, J.M.

doi:10.1126/science.276.5310.238

Cited by 591 publications

(408 citation statements)

References 9 publications

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“…1,2 Ferroelectricity is difficult, generally, to maintain when the size of the ferroelectric material is greatly reduced. 3 Furthermore, the growth of thin insulating films depends strongly on the substrate.…”

Section: Introductionmentioning

confidence: 99%

Simulations of ferroelectric polymer film polarization: The role of dipole interactions

et al. 2004

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We present a systematic study of the dipole alignment in the polyvinylidene fluoride (PVDF) films using first-principles total energy calculations. The ground state of a single layer film is a state with all the dipoles lying parallel to the film plane. This can also be explained by a dipole-dipole interaction model. The induced mirror charges on conducting substrates or substrates with a non-negligible dielectric response play an important role in aligning the polarization perpendicular to the film. From fitting the ab initio calculations, we obtain an effective monomer dipole moment of 4.7ϫ 10 −30 C m. This corresponds to a spontaneous polarization of 0.087 C / m 2 , which agrees with other theoretical and experimental values. Simulation reveals a more complex behavior for molecular bilayer. We studied three molecular multilayer structures to compare the total energy and model calculations. Close examination of these results provides a better understanding of PVDF film growth and dipole orientation on different substrates.

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Section: Introductionmentioning

confidence: 99%

Simulations of ferroelectric polymer film polarization: The role of dipole interactions

et al. 2004

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“…These results and interpretations explain well the seemingly contradicting polarization reversal dynamics reported and offer opportunities to change domain reversal speed by making ferroelectric polymer nanostructures. Ferroelectric materials have been extensively studied in the past decades because they pave the way to a myriad of electrically controlled devices [1][2][3][4]. Understanding the mechanism of polarization switching is critical for the prediction and optimization of ferroelectric devices.…”

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confidence: 99%

Two-Step Polarization Switching in Ferroelectric Polymers

Jonas

et al. 2015

Phys. Rev. Lett.

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The correlation between hierarchical structures and polarization switching in ferroelectric poly (vinylidene fluoride-ran-trifluoroethylene) has been probed by combining transmission electron microscopy studies with piezoresponse force microscopy observations. Differences are demonstrated between homogeneous and anisotropic thin films with well-defined lamellar orientation, with the later exhibiting quadrangular domain shape and double hysteresis. We propose that the polarization switching within lamella is dominated by domain wall flow motion, while the amorphous components between lamellae impede full polarization switching. The coupling between lamellae is controlled by a creep process. These results and interpretations explain well the seemingly contradicting polarization reversal dynamics reported and offer opportunities to change domain reversal speed by making ferroelectric polymer nanostructures.

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“…In the majority of atomically layered oxides explored to date, however, the heterostructures are constructed by interleaving two or more bulk materials, often perovskite 'blocks' with well-defined three-dimensional connectivity [10][11][12][13][14][15] . Rarely are the starting oxides natural heterostructures themselves, for example, Aurivillius, Dion-Jacobson or the RuddlesdenPopper (RP) phases.…”

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confidence: 99%

Massive band gap variation in layered oxides through cation ordering

Balachandran

Rondinelli

2015

Nat Commun

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The electronic band gap is a fundamental material parameter requiring control for light harvesting, conversion and transport technologies, including photovoltaics, lasers and sensors. Although traditional methods to tune band gaps rely on chemical alloying, quantum size effects, lattice mismatch or superlattice formation, the spectral variation is often limited to o1 eV, unless marked changes to composition or structure occur. Here we report large band gap changes of up to 200% or B2 eV without modifying chemical composition or use of epitaxial strain in the LaSrAlO 4 Ruddlesden-Popper oxide. First-principles calculations show that ordering electrically charged [LaO] 1 þ and neutral [SrO] 0 monoxide planes imposes internal electric fields in the layered oxides. These fields drive local atomic displacements and bond distortions that control the energy levels at the valence and conduction band edges, providing a path towards electronic structure engineering in complex oxides.

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Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

Cited by 591 publications

References 9 publications

Simulations of ferroelectric polymer film polarization: The role of dipole interactions

Simulations of ferroelectric polymer film polarization: The role of dipole interactions

Two-Step Polarization Switching in Ferroelectric Polymers

Massive band gap variation in layered oxides through cation ordering

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