Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ heterostructures at room temperature

Abstract

The accumulation/depletion of charge at the Al:ZnO/PMN-PT interface results in a reversible and nonvolatile resistance state.

Effects of Illumination and Ferroelectric Field on Nanoscale Al:ZnO Films: Implications for Nonvolatile Multistage Storage and Photosensor Devices

“…This further proves that the change in the carrier density due to the ferroelectric field effect is mainly on the interface between AZO and PMN-PT. This is consistent with our previous work that the resistance switching under ferroelectric field is more pronounced in the AZO/PMN-PT heterostructures with thinner (20 nm thick) AZO films 39. From Figure3a,b, it can be seen that the surface potential of the AZO films exhibits gradually increasing behavior under the illumination, so the KPFM mapping was further measured until the surface potential stabilized.…”

“…This is consistent with our previous work that the resistance switching under ferroelectric field is more pronounced in the AZO/PMN-PT heterostructures with thinner (20 nm thick) AZO films. 39 From Figure 3a,b, it can be seen that the surface potential of the AZO films exhibits gradually increasing behavior under the illumination, so the KPFM mapping was further measured until the surface potential stabilized. Figure 4 shows the KPFM graph and the line scan along the white straight line.…”

“…36−38 Recently, we investigated the resistance switching in the Al:ZnO/0.7PbMg 1/3 Nb 2/3 O 3 −0.3PbTiO 3 (AZO/PMN-PT) heterostructures due to the interfacial ferroelectric field effect, by using the AZO films with different thicknesses. 39 The AZO film is considered to be one of the most promising materials in the 21st century. Its raw material ZnO has better chemical properties, which are low cost and more environmentally protective and come from a wide range of sources.…”

“…Recently, we investigated the resistance switching in the Al:ZnO/0.7PbMg 1/3 Nb 2/3 O 3 –0.3PbTiO 3 (AZO/PMN-PT) heterostructures due to the interfacial ferroelectric field effect, by using the AZO films with different thicknesses . The AZO film is considered to be one of the most promising materials in the 21st century.…”

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

“…So far, RS characteristics are typically regulated by an electric field. However, to further improve stability, reduce consumption, increase density, and enhance versatility, multi-field coordinated regulation has attracted widespread attention in RRAM [ 3 , 4 , 5 , 6 , 7 ]. Therein, electrically/optically controlled RS behavior has the potential to build multifunctional optoelectronic memristor devices, simplify the complexity of programmable logic circuits, and reduce costs [ 6 , 8 , 9 ].…”