Ferroelectric Gate on AlGaN/GaN Heterostructures

Abstract

The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric random access memory, FeRAM, which allows for high speed, low voltage and greater write-erase endurance compared to its two main competitors, Flash and EEPROM, when using the one transistorone capacitor configuration. However, it is desired to further optimise the configuration in order to obtain better densification, faster access time and better reliability. One way to do such is to pass from the ferroelectric capacitors and develop ferroelectric field effect transistors.Exploiting the phenomenon of ferroelectricity and integrating ferroelectrics with the semiconductor technology has not been simple. The FeFET has been demonstrated using a silicon-based transistor, however commercial devices are not available. Challenges arise mainly due to the high temperature deposition of perovskite ferroelectrics causing the degradation of the ferroelectric/semiconductor interface due to inter-diffusion. Acquiring long term retention of the transistor behavior has also been problematic due to phenomenons such as charge injection and depolarisation.In this thesis a new approach to the problem of semiconductor devices with a ferroelectric gate is explored. Instead of using a silicon-based device, semiconductor heterostructures are investigated. Combining the high mobility channel existing in semiconductor heterostructures, with the non-volatile switching of the polarisation in the ferroelectric gate can pave the way to novel future devices.The AlGaN/GaN semiconductor heterostructure was chosen for two main reasons. The first is a two dimensional electron gas, 2DEG, located at the AlGaN/GaN interface which possesses better transport properties than a single layered semiconductor. Secondly, GaN and its alloys are known to have large chemical and temperature stability making them ideal to withstand the high temperature deposition process of perovskite ferroelectrics.The deposition of two ferroelectric layers onto the AlGaN heterostructure were investigated. Lead zirconium titanate, PZT, a traditional perovskite ferroelectric deposited at high temperature, was chosen for its high remanent polarisation and low coercive field. An alternative ferroelectric gate, the co-polymer poly(vinylidene fluoride/trifluoroethylene), P(VDF/TrFE)(70:30) was deposited and of interest due its low crystallisation temperature and low dielectric constant. Its remanent polarisation is smaller and coercive field larger than that of PZT, but were determined sufficient to observe the depletion effect in the two dimensional electron gas.The goals accomplished in this research were:Development of Ferroelectric Gate Processing: Deposition processes of the ferroelectric layers were developed and optimised in order to obtain a high quality ferroelectric, while maintaining the original transport properties...

Can we enhance two-dimensional electron gas from ferroelectric/GaN heterostructures?

“…To overcome the problems associated with the integration of FE and GaN, proper buffer layers, such as PbO, 7 TiO 2 , 8,13,31 MgO, 13,32 etc., have been employed. Typically, we choose MgO as the representative intermediate layer.…”

“…Heterostructures that combine FE with semiconductor materials can be expected to exhibit physical properties that not only have superior properties of both materials but also have some unusual effects. 13 GaN and its alloys are known to be chemical and temperature stable. 2 Recently, as the development in synthesis, characterization, and theory of complex oxides, growth of FE onto silicon, 3 germanium, 4 GaAs, 5 and GaN [6][7][8][9] has been realized.…”