Ferroelectric gate transistors

Rabson, Thomas A.; Rost, T.A.; Lin, He

doi:10.1080/10584589508019350

Cited by 18 publications

(9 citation statements)

References 6 publications

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“…The early ferroelectric FETs utilized gates of lithium niobate (Rice Univ.) (Rabson et al, 1995) or BaMgF 4 (Westinghouse) (Sinharoy et al, 1991), (Sinharoy et al, 1992), (Sinharoy et al, 1993). An example of a ferroelectric FET device as fabricated by Mathews et al (1997) is shown in Fig.…”

Section: Ferroelectric Fet'smentioning

confidence: 99%

Physics of thin-film ferroelectric oxides

2005

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This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.Comment: This is an invited review for Reviews of Modern Physics. We welcome feedback and will endeavour to incorporate comments received promptly into the final versio

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Section: Ferroelectric Fet'smentioning

confidence: 99%

Physics of thin-film ferroelectric oxides

2005

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“…A variety of FeFETs had been investigated over the past decades [2,3,4,5,6,7,8,9,10]. However, despite much effort by a lot of research groups, data retention time of the FeFETs has been short.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Sakai

Takahashi

2010

Materials

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We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 106 after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 105. A fabricated self-aligned gate Pt/SrBi2Ta2O9/Hf-Al-O/Si FET revealed a sufficiently large drain current ratio of 2.4 × 105 after 33.5 day, which is 6.5 × 104 after 10 years by extrapolation. The developed FeFETs also revealed stable retention characteristics at an elevated temperature up to 120 °C and had small transistor threshold voltage (Vth) distribution. The Vth can be adjusted by controlling channel impurity densities for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuit application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.

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“…As discussed by Scott [15], common perovskite ABO 3 ferroelectrics are all p-type in bulk, due to the greater abundance as of low-valence substitutional impurities in Nature (e.g., Na substitutional for Sr or Mg or Fe substitutional for Ti or Ta or Nb), in thin-film form there is usually an n-type inversion layer at the surface or interface, and the resulting conduction is dominantly via electrons (n-type conduction). This point that ferroelectric oxides such as PZT are n-type devices, is used by Grekhov for his PLZT on Ag devices and has generally been recognized by almost all researchers, with the conspicuous exception of Stolichnov and Tagantsev [34], who treated the conduction as p-type, based upon an incorrect interpretation of results of Dixit et al [35] and a subsequent error by Wouters et al [36] giving an incorrect band diagram.…”

Section: Effective Masses For Carriersmentioning

confidence: 96%

“…Ishiwara has pointed out that this may be because the gate must be grounded in the READ operation. As pointed out by Ishiwara et al [15], the depolarization field in a ferroelectric gate is inevitably generated when the gate is grounded, and this makes it very difficult to obtain >10 year data retention in an FE-FET. His suggested solution is to utilize a 1T-2C capacitor geometry in which the functions of data retention and READ were separated.…”

Section: Development Of An All-perovskite Ferroelectric-gated Field Ementioning

confidence: 98%

“…There are other viable alternatives to achieve ultra-high density non-volatile RAMs: MITI has funded a consortium in Japan for several years now, under the general direction of Prof. Ishiwara at Tokyo Institute of Technology to develop the so-called "1T" FRAM, in which the ferroelectric is the FET gate [15]. By replacing the metal gate with a ferroelectric, one can read the cell/bit non-destructively, simply by sensing the source-drain current.…”

Section: New Materials: Magnetoelectrics ("Multiferroics")mentioning

confidence: 99%

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