Ferroelectric memory based on nanostructures

Abstract

In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs.

Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate

“…However, in the published literatures on optical studies, the BFO thin film is usually directly deposited on perovskite oxide SrTiO 3 (STO) and DyScO 3 (DSO) substrate for epitaxial growth. So far, there is no report on optical properties of the BFO thin film with an electrode structure in spite of the fact that the lower electrode is necessary for the study on electronic and ferroelectric properties of the BFO thin film as well as for its applications including nonvolatile memory devices [ 10 ]. Since SrRuO 3 (SRO) is often chosen as the lower electrode for the BFO thin film as well as for the buffer layer to control its nanoscale domain architecture [ 11 ], it is desirable to investigate the optical properties of the BFO thin film grown on SRO.…”

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

“…The partial loss of the normalized P nv after 10 11 read/write switching cycles is observed for the FeFET, which are approximately 3, 10, and 25% for SWCNT/BNT/HfO 2 -FeFET, SWCNT/BNT-FeFET, and MWCNT/BNT-FeFET, respectively. When BNT directly grows on the bottom electrode Si, the fatigue performance of SWCNT/BNT-FeFET is very bad because of the diffusion between BNT and Si substrate through grain boundary [ 12 – 14 ]. These results suggest that the HfO 2 layer effectively blocks the diffusion of Si substrate and reduces the ion impurities, which results in excellent fatigue endurance performance.…”

“…Compared to multiwalled CNT (MWCNT), the single-walled CNT (SWCNT) is a seamlessly wrapped single graphene sheet formed into a cylindrical tube [ 11 ]. Moreover, there are some defects (such as ion impurities, oxygen vacancies, and dislocations) which are difficult to control during the fabrication of ferroelectric thin film [ 12 – 14 ]. The diffusion of these defects can affect the on/off current ratio, fatigue endurance performance, and data retention [ 15 , 16 ].…”

Recent Advances in Ferroelectric Nanosensors: Toward Sensitive Detection of Gas, Mechanothermal Signals, and Radiation

“…They exhibit numerous excellent properties such as direct and inverse piezoelectricity, pyroelectricity, ferroelectric photovoltaicity, and nonlinear optical activity. This exceptional combination of various properties makes them attractive for application in field effect transistors [5], nonvolatile memories [6], capacitors [7,8], photovoltaic cells [9,10], actuators [11], piezoelectric energy harvesters [8,[12][13][14][15], thermal imaging cameras, and electro-optic devices [16]. Nanoferroelectrics are also commonly used in sensors, since the polarization is influenced by various external conditions, including an electric field, mechanical deformation, temperature, and chemical and biological factors.…”