Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices

Kossar, Shahnaz; Amiruddin, R.; Rasool, Asif; Venkatesan, G.; Dhayanithi, D.; Kumar, M.C. Santhosh

doi:10.1016/j.spmi.2020.106726

Cited by 21 publications

(8 citation statements)

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“…Moreover, the XPS test was conducted for both of the devices. To date, many studies have shown that XPS results can confirm the existence of oxygen vacancies [36,42]. As shown in Figure 5a, the O 1s spectrum of the devices annealed in air was fitted by two Gaussian peaks at 529.5 and 531.5 eV.…”

Section: Electrical Performancementioning

confidence: 97%

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

et al. 2021

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Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

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Section: Electrical Performancementioning

confidence: 97%

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

et al. 2021

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“…It results in the HRS. Thus, the change of HRS to LRS and LRS to HRS is facilitated by ferroelectric polarization in the active layer, during bias reversal. ,− …”

Section: Methodsmentioning

confidence: 99%

Multifunctional BiFeO₃ Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Prakash

Dixit

2022

ACS Appl. Electron. Mater.

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We report the potential of low-cost sol–gel-synthesized phase pure BiFeO3 thin films as an active material with Cu as the top contact and fluorine-doped tin oxide (FTO) as the bottom contact, that is, Cu/BiFeO3/FTO-based devices for analogue resistive switching characteristics, suitable for beyond von Neumann computing. The Cu/BiFeO3/FTO device showed robust repeatability of bipolar resistive switching up to 3000 cycles. Moreover, retention measurements suggest that the device is stable for 17,000 s at 0.2 V, and endurance measurements suggest reliability for 5000 cycles at 1 and −1 V. Moreover, the Cu/BiFeO3/FTO device showed synaptic behavior, including short- and long-term plasticity and change in ionic conductance with time-dependent pulses suitable for neural network applications. The pulse paired facilitation (PPF) measurements demonstrated a reduction in the PPF value from 9 to 1% with the increasing pulse width from 10 to 400 ms. The strengthening in signal transmission is shown by increasing the synaptic weight from 20 to 22.5 approximately, with the increasing scan rate from 100 to 400 mV/s. The increase in the scan rate resulted in the synaptic weight saturation, and a change in ionic conductance is observed at 0.7 and 0.2 V with varying pulse widths ∼10, 20, and 50 ms, having a 10 ms pulse interval. The spike time-dependent plasticity measurement is carried out for the symmetric and asymmetric Hebbian rule with 4 s pulse width at 1.2 and −1.2 V pulse amplitude. The device also showed ∼96% recognition characteristics, as estimated from retention loss characteristics. Thus, the present work emphasizes the utility of BiFeO3-based analogue devices for memristive neuromorphic computing devices.

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“…As a result, Si-based NVM devices have been dominated due to several limitations, including scalability issues, relatively slow operation speeds, and high voltages requirements for programming and erasing [4]. In order to overcome these limitations, a wide variety of switching layers were explored, such as metal oxides [5], non-metal oxides [6], composite materials [7], and metallic sulfides [8]. Among them, metal oxides such as zinc oxide (ZnO) [9], gallium oxide (GaO) [10], titanium oxide (TiO 2 ) [11], copper oxide (CuO) [12], niobium pentaoxide (Nb 2 O 5 ) [13], zirconium oxide (ZrO 2 ) [14], nickel oxide (NiO) [15], and hafnium oxide (HfO 2 ) [16] etc be the potential candidates for achieving the requirements of next-generation NVM devices [2].…”

Section: Introductionmentioning

confidence: 99%

“…To change the resistance state of a ReRAM cell, an electric field is applied to the cell. The transition from HRS to LRS is referred to as 'SET' operation, while the reverse transition from LRS to HRS is referred to as 'RESET' operation [5,7]. Moreover, various successful reports were available with high-quality of NiO thin films by pre-treated with an ionic liquid(IL) under positive voltage [17], radio frequency (R.F) magnetron sputtering [18], atomic layer deposition (ALD) [19], pulsed laser deposition (PLD) [20] and metal-organic chemical vapor deposition (MOCVD) [21] towards the realization of R characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, various successful reports were available with high-quality of NiO thin films by pre-treated with an ionic liquid(IL) under positive voltage [17], radio frequency (R.F) magnetron sputtering [18], atomic layer deposition (ALD) [19], pulsed laser deposition (PLD) [20] and metal-organic chemical vapor deposition (MOCVD) [21] towards the realization of R characteristics. However, such vacuum-assisted techniques are time-consuming and cost prohibitive process [5]. To realize the RS of uniform NiO thin films, solution-based techniques have gained a significant attention due to its low-cost and easy to handle during the deposition process [22].…”

Section: Introductionmentioning

confidence: 99%

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Impact of substrate temperature on NiO thin films for resistive switching memory (ReRAM) memory devices

Kossar

2024

Eng. Res. Express

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In this research, we report the bipolar resistive switching (RS) behavior of NiO thin films at various substrate temperature between 300ºC to 400ºC. A non-vacuum spray pyrolysis method is adopted to deposit NiO thin film layers. The structural studies confirm that all the NiO thin films were polycrystalline in nature along with cubic structure. The micrograph analysis of the NiO thin film layers shows a homogeneous distribution of grain without voids and micro-cracks. The optical transmittance spectra reveals that NiO (375) sample exhibit maximum transparent (> 60 %) in the visible region. The NiO switching layers were sandwiched between bottom indium-doped tin oxide (ITO), and top silver (Ag) electrodes, and their RS behavior were examined. The fabricated ITO/NiO/Ag RS devices shows bipolar current (I)-voltage (V) behavior with calculated ON/OFF ratio of 1.5. Moreover, the observed RS bahaviour in the fabricated ITO/NiO/Ag devices was associated due to the formations and ruptures of conductive paths.Keywords: Nickel oxide (NiO); formation and rupture; resistive switching (RS) 

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Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices

Cited by 21 publications

References 73 publications

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Multifunctional BiFeO₃ Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Impact of substrate temperature on NiO thin films for resistive switching memory (ReRAM) memory devices

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Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices

Cited by 21 publications

References 73 publications

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Multifunctional BiFeO3 Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Impact of substrate temperature on NiO thin films for resistive switching memory (ReRAM) memory devices

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Multifunctional BiFeO₃ Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems