Ferroelectric Properties of Au/Bi_3.25La_0.75Ti₃O₁₂/ITO Thin Film Capacitors

Abstract

Characterizations on the crystallization, chemical composition and electrical property of pulsed laser deposited Bi 3.25 La 0.75 Ti 3 O 12 thin film with a thickness of 200 nm was investigated under various post-annealing treatments. Films annealed at 650 • C showed a relatively large ferroelectric property compared to other films, consisting with remnant polarization and coercive field values of 14∼16 µC/cm 2 and 90∼100 kV/cm, respectively. The films were found to be fatigue resistive but their hysteresis loops before and after undergoing 1 × 10 11 switching cycles showed a shift to the positive field. The n-type semiconducting property of the ITO electrode seems to be the main reason for concentrating the polarity to the positive electric field.