Ferroelectric properties of epitaxial BaTiO3 thin films and heterostructures on different substrates

Trithaveesak, O.; Schubert, J.; Buchal, Ch.

doi:10.1063/1.2135891

Cited by 70 publications

(47 citation statements)

References 36 publications

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“…1a shows P-E hysteresis loops for the BTO100 film. The maximum polarization (P max ), saturation polarization (P s ), remanent polarization (P r ) and coercive field (E c ) values for the BTO100 film are 62.4 μC cm , respectively, with the applied electric field range of ± 500 kV cm −1 , which are comparable to those of epitaxial BTO films in the literatures [47][48][49][50]. Fig.…”

Section: Resultssupporting

confidence: 66%

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

et al. 2018

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A B S T R A C TLead-free perovskite oxide thin films prepared by alloying of titanates and materials with lower melting points are shown to have enhanced ferroelectric and dielectric properties. BaTiO 3 (or SrTiO 3 ) with 25% addition of BiFeO 3 has much improved crystalline perfection because of the lower melting point of the BiFeO 3 giving enhanced growth kinetics. The maximum dielectric peak temperature of BaTiO 3 is increased by~200°C and leakage currents are reduced by up to a factor of~100. The loss tangent reduces up to 300°C, with a factor of > 14 reduction at room temperature. The dielectric breakdown strength is higher by a factor of~3 (> 2200 kV cm ) and from room temperature up to 500°C the dielectric constant is > 1000. Also, a low variation of dielectric constant of~9% from room temperature to 330°C is obtained, compared to~110% for BaTiO 3 . The maximum polarization (P max ) is double that of BaTiO 3 , at 125.3 μC cm −2. The film has high energy storage densities of > 52 J cm −3 at 2050 kV cm −1 , matching Pb-based ferroelectric films. The strongly improved performance is important for applications in energy storage and in high temperature (up to 300°C) capacitors as well as wider application in other electronic and energy technologies.

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Section: Resultssupporting

confidence: 66%

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

et al. 2018

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“…As an example, a typical variation of capacitance and dielectric losses is shown in Figure 1 for selected spot frequencies and for the whole temperature range for a sputtered Nb-doped BaTiO 3 film. In this figure, two anomalies are clearly evidenced at about 250 K and 50 K. We will first focus on the high temperature feature which was already reported in several papers 12,13 for BaTiO 3 films with different electrodes. The maximum in losses can be ascribed to a dielectric relaxation whose activation energy is computed from an Arrhenius law linking the operating frequency f to the related temperature T where the loss maximum occurs f = f 0 e −E/kT .…”

Section: Resultsmentioning

confidence: 98%

Low temperature dielectric relaxation and charged defects in ferroelectric thin films

et al. 2013

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We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K) for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR) investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O) charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping

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“…Nevertheless, improved control of interfaces in advanced ceramics may help using space charges in defected oxides for applications in integrated devices. 78 Such interfaces being of great influence in thin films and multilayers, the resulting space charges are clearly evidenced in perovskite multilayers 79,80 while polarons also induce a low temperature relaxation. 81 …”

Section: Discussionmentioning

confidence: 99%

Free charge localization and effective dielectric permittivity in oxides

Maglione

2016

J. Adv. Dielect.

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This review will deal with several types of free charge localization in oxides and their consequences on the effective dielectric spectra of such materials. The first one is the polaronic localization at the unit cell scale on residual impurities in ferroelectric networks. The second one is the collective localization of free charge at macroscopic interfaces like surfaces, electrodes and grain boundaries in ceramics. Polarons have been observed in many oxide perovskites mostly when cations having several stable electronic configurations are present. In manganites, the density of such polarons is so high as to drive a net lattice of interacting polarons. On the other hand, in ferroelectric materials like BaTiO 3 and LiNbO 3 , the density of polarons is usually very small but they can influence strongly the macroscopic conductivity. The contribution of such polarons to the dielectric spectra of ferroelectric materials is described. Even residual impurities as for example Iron can induce well-defined anomalies at very low temperatures. This is mostly resulting from the interaction between localized polarons and the highly polarizable ferroelectric network in which they are embedded. The case of such residual polarons in SrTiO 3 will be described in more detail, emphasizing the quantum polaron state at liquid helium temperatures. Recently, several nonferroelectric oxides have been shown to display giant effective dielectric permittivity. It is first shown that the frequency/temperature behavior of such parameters is very similar in very different compounds (donor-doped BaTiO 3 , CaCu 3 Ti 4 O 12 , LuFe 2 O 4 , Li-doped NiO, etc.). This similarity calls for a common origin of the giant dielectric permittivity in these compounds. A space charge localization at macroscopic interfaces can be the key for such extremely high dielectric permittivity.

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Ferroelectric properties of epitaxial BaTiO3 thin films and heterostructures on different substrates

Cited by 70 publications

References 36 publications

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Free charge localization and effective dielectric permittivity in oxides

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