Ferroelectric properties of heterolayered lead zirconate titanate thin films

Abstract

Heterolayered Pb(Zr 1−x Ti x )O 3 thin films consisting of alternating PbZr 0.7 Ti 0.3 O 3 and PbZr 0.3 Ti 0.7 O 3 layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600-700 • C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650 • C, which exhibits a remanent polarization of 47.7 μC/cm 2 and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement.

Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

“…The Pb(Zr 0.3 Ti 0.7 )O 3 thin films were deposited via a solϪgel route, 46 assisted by spin coating. The precursor was prepared from Pb(CH 3 COO) 2 3H 2 O, Zr[OCH(CH 3 ) 2 ] 4 , and Ti[O-CH(CH 3 ) 2 ] 4 .…”

Bipolar and unipolar electrical fatigue in ferroelectric lead zirconate titanate thin films: An experimental comparison study

“…The preparation procedures are as the same as those reported elsewhere. 14 X-Ray Diffraction (XRD, D8 Advanced Diffractometer System, Bruker) and Field Emission Scanning Electron Microscopy (FE-SEM, XL30 FEG Philips) studies show that the films are polycrystalline and of a perovskite phase. For electrical measurements, the top electrodes (Pt squares of ~100 x 100 µm 2 ) were then deposited by sputtering on the films via transmission electron microscopy (TEM) grids.…”

Effect of manganese doping on the size effect of lead zirconate titanate thin films and the extrinsic nature of ‘dead layers’

“…After a desired number of layers were coated, the P(M)ZT films were finally annealed at 650 • C for 30 min in air in a quartz tube furnace (carbolyte) to achieve the wanted phase. The preparation procedures are as the same as those reported elsewhere [29]. Phase identification and the growth orientation of the P(M)ZT films were characterized using xray diffraction (XRD, D8 Advanced Diffractometer System, Bruker).…”

“…The preparation procedures are as the same as those reported elsewhere. 23 Phase identification and growth orientation of the P(M)ZT films were characterized using X-Ray Diffraction (XRD, D8 Advanced Diffractometer System, Bruker). Film textures were measured using Field Emission Scanning Electron Microscopy (FE-SEM, XL30 FEG Philips).…”