Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol–gel method

Bae, Ji Cheul; Kim, Sang Su; Choi, Eun Kyung; Song, Tae Kwon; Kim, Won-Jeong; Lee, Yong‐Ill

doi:10.1016/j.tsf.2004.06.115

Cited by 59 publications

(25 citation statements)

References 12 publications

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“…An increase in La contents resulted in a decrease in the grain size because the substituted La acts as a grain-growth inhibitor in the BLT films. 16) Additionally, surface holes were observed on the BLT films with x = 0, 0.25, and 0.50 while the surface of the BLT films with x = 0.75 and 1.00 was closely packed without surface holes. It was observed that La substitution (x = 0.75 and 1.00) to BIT film was effective to induce an improved microstructure of the BLT films without the formation of surface holes.…”

Section: Resultsmentioning

confidence: 89%

Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition

Park

Lee

Hill

et al. 2009

J. Ceram. Soc. Japan

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Section: Resultsmentioning

confidence: 89%

Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition

Park

Lee

Hill

et al. 2009

J. Ceram. Soc. Japan

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“…Although in our work, we applied the chemical solution deposition (CSD) method, it is interesting to compare our result with the work of Bae et al who present the ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol-gel method [8]. In their work, lanthanum-doped bismuth titanate, Bi 3.25 La 0.75 Ti 3 O 12 (BLT), and thin films were grown on Pt(1 1 1)/Ti/SiO 2 /Si (1 0 0) substrates by a sol-gel spin coating process.…”

Section: Effect Of Lanthanum Doping On Ferroelectric Host Materialsmentioning

confidence: 85%

The Effects of Lanthanum Dopant on the Structural and Optical Properties of Ferroelectric Thin Films

Irzaman¹,

Hardhienata²,

Maddu³

et al. 2017

Rare Earth Element

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This chapter presents the effect of lanthanum (La) dopant on the structural and optical properties of the following ferroelectric thin films: barium strontium titanate (Ba 0.5 Sr 0.5 TiO 3 ) (BST), lithium tantalate (LiTaO 3 ), and lithium niobate (LiNbO 3 ). We applied X-ray diffraction, Fourier transform infrared spectroscopy (FTIR), and in some cases, atomic force microscopy to investigate the structural properties, functional groups, and particle size, as well surface roughness of these lanthanum-doped thin films, respectively, whereas ultra violet-visible (UV-Bis) spectrometer was applied to investigate the optical bandgap of the La-doped thin films. The results are in agreement with other previously researcher studies using different substrate materials. In general, the effect of La dopant highly affects both the structural and optical properties, changing significantly the grain size, surface roughness, and energy gap, and in certain cases, such as BST doped by La can change the material electric properties from insulator to semiconductor. Therefore, La-doped thin films may offer promising applications in the future.

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“…16),17) This is simultaneously favored by the stabilization of the oxygen vacancies (V 00 O ). 23) To get insight into the effect of Pr 3+ substitution on the control of crystal growth, the degree of orientation ( f ) was determined as following Equation: 24) f ¼ IðhklÞ Ið006Þ þ Ið117Þ þ Ið200Þ ð1Þ…”

Section: Synthesis Of Bit and Bpt Powdermentioning

confidence: 99%

Fuel-free low-temperature self-combustion synthesis and characterization of praseodymium-substituted bismuth titanate ceramics

Krengvirat

Sreekantan

Noor

et al. 2012

J. Ceram. Soc. Japan

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This paper presents the preparation of bismuth titanate (Bi 4 Ti 3 O 12 ; BIT) and praseodymium-substituted bismuth titanate (Bi 4¹x Pr x Ti 3 O 12 : BPT) with various molarities of praseodymium ion (Pr 3+ : x = 0.2, 0.6 and 1.0) via a fuel-free low-temperature self-combustion synthesis process (FLSC). FLSC offers a remarkable ability to produce polycrystalline BIT powder with an orthorhombic structure, and BPT powder with a tetragonal structure. The substitution of Pr 3+ into the BIT system retarded the crystal growth, as revealed by the decrease in the crystallite size from 106 to 41 nm by incorporating Pr 3+ with x = 1.0. Besides, the substitution caused the structure transformation from platelet-like structure to aquiaxed structure. Such structure provides an essential role to enhance the ceramic density. High relative density of about 99.3% was achieved for the BPT ceramic compared to BIT ceramic with a relative density of 89.7%. The results underline the possibility to control the anisotropic grain growth of BIT ceramic by incorporating Pr 3+ into the BIT system through FLSC. The ceramic sintered at 1100°C exhibited high dielectric permittivity (269.38) with a low dissipation factor as low as 0.00203.

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Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol–gel method

Cited by 59 publications

References 12 publications

Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition

Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition

The Effects of Lanthanum Dopant on the Structural and Optical Properties of Ferroelectric Thin Films

Fuel-free low-temperature self-combustion synthesis and characterization of praseodymium-substituted bismuth titanate ceramics

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