Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics

Biocompatible Collagen Films as Substrates for Flexible Implantable Electronics

“…operational amplifi ers, [ 14 ] ferroelectric memories, [ 15 ] and digital circuits. [ 16 ] Poly( L -lactide-co -glycolide) (PLGA), as one of the most common biodegradable polymers used in temporary medical implants has been a frequent component in biomedical devices and drug delivery systems.…”

“…Thus, synthetic polymers such as poly(ethylene terephthalate) (PET), poly(imide) (PI), and poly(ether sulfone) have been used as substrates. Other organic materials have also been used as active layers in operational amplifiers, ferroelectric memories, and digital circuits . Poly( l ‐lactide‐ co ‐glycolide) (PLGA), as one of the most common biodegradable polymers used in temporary medical implants has been a frequent component in biomedical devices and drug delivery systems .…”

Resistance switching and conduction mechanism on ferroelectric copolymer thin film device

“…There is no need to undergo harsh electric and magnetic field treatments, and the high-crystallinity fully anti-ferroelectric phases can be obtained directly from the solution by annealing at low temperature [8]. In the past few years, P(VDF-TrFE) has been applied in various memories, including ferroelectric resistive memory [4,9,10], ferroelectric capacitors [11,12], ferroelectric tunnelling junction (FTJs) [13][14][15][16][17], ferroelectric diodes [18][19][20][21][22][23][24], ferroelectric field effect transistors (FeFET) [25][26][27][28][29]. In FTJs, ferroelectric film is only a few nanometres so that electrons can pass through the ferroelectric through the quantum tunnelling effect.…”

Low Temperature Processed Two-Transistor- Two-Capacitor-Based Ferroelectric Random Access Memory

“…Many types of memory devices have been investigated for flexible electronics [2], [10]- [14]. In particular, ferroelectric-based memories are of interest due to fast I.…”

“…However, secondary effects including charge trapping and depolarization field (caused by the band bending at the semiconductor surface, and equal to the band bending divided by the thickness of the ferroelectric film under the short circuit condition [13], [17]) can potentially degrade the reliability of the 1T device [18]. In our previous research, we have successfully developed a low temperature process for ferroelectric capacitor [19] and 1T1C-based memory cells fabrication [14]. For ferroelectric random access memory (FRAM) integration, an external reference voltage is required in the 1T1C architecture for voltage sensing, which can decrease the read window due to the memory cell position dependence and cycling nonuniformity among different bits.…”