Ferroelectric Schottky diode behavior from a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SrRuO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:mtext>-Pb</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mtext>Zr</mml:mtext></mml:mrow><mml:mrow><mml:mn>0.2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Ti</mml:mtext></mml:mrow><mml:mrow><mml:mn>0.8</mml:mn></mml:mrow></mml:msub></mml:mrow><mml

Pintilie, L.; Stancu, V.; Trupina, L.; Pintilie, I.

doi:10.1103/physrevb.82.085319

Cited by 66 publications

(44 citation statements)

References 25 publications

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“…The fact that the capacitance still has a voltage dependence after polarization reversal support the presence of Schottky type contacts at the electrode interfaces, as already suggested in the literature. [45][46][47][48][49][50][51] One can see that the capacitance values are different for different metals used as top contacts. This fact strongly suggests that the electrode interfaces play an important role in the electric/ dielectric properties of epitaxial ferroelectric thin films.…”

Section: C-v Characteristicsmentioning

confidence: 98%

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

Pintilie

Hrib

Pasuk

et al. 2014

Journal of Applied Physics

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Voltage and frequency dependent capacitance measurements were performed on epitaxial BaTiO3 and Pb(Zr0.2Ti0.8)O3 thin films deposited on single crystal SrTiO3 substrates with (001) and (111) orientations. The measured capacitors have common bottom SrRuO3 contact and different metals as top electrodes: SrRuO3, Pt, Cu, Al, and Au. The capacitance-voltage characteristics were used to extract information regarding the density of the free carriers and the linear contribution to the static dielectric constant. The frequency dependent impedance was used to develop a suitable equivalent circuit for the epitaxial ferroelectric capacitors. It was found that the frequency dependence of the imaginary part of the impedance can be well simulated, in all cases, using a circuit composed of Schottky-type capacitance related to electrode interfaces, contact resistance, and the R-C parallel connection related to the ferroelectric volume of the film. Values for the components of the equivalent circuit were obtained by fitting the experimental data with the simulated curves. These were then used to extract quantities such as dielectric constant in the ferroelectric volume, the width of the depletion layers, and the apparent built-in potential. It was found that, although the investigated capacitors are of different ferroelectric materials, grown on substrates with different orientations, and having different metals as top electrodes, the values for the capacitance associated with the Schottky contacts and the apparent built-in potential are not very different. The results suggest a strong influence of ferroelectric polarization on the electrode interface properties in the case of epitaxial ferroelectric films.

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Section: C-v Characteristicsmentioning

confidence: 98%

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

Pintilie

Hrib

Pasuk

et al. 2014

Journal of Applied Physics

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“…Since first discovered experimentally by Blom et al [431] in PbTiO 3 perovskite thin films, non-destructive readout of the binary information is believed possible from the bipolar switching between high- and low-conductance of a ferroelectric diode under two opposite polarizations, which have been further verified in other ferroelectric thin films such as PZT and BFO [245,432,433], etc . Recent experimental studies by Jiang et al [246] and Pantel et al [390] have also clearly demonstrated that ferroelectricity and conductivity coexist in a single phase with the conductivity can be modulated by ferroelectricity, realizing nondestructive resistive readout.…”

Section: Important Phenomena In Ferroelectric Thin Filmsmentioning

confidence: 99%

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

et al. 2014

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Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

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“…The polarization charges can affect the barrier at the interface between electrodes and ferroelectrics, and the reversal of the polarization produces a change in the band diagram [7,8]. As a result of this, bistable resistance states can be obtained for two opposite polarizations.…”

Section: Introductionmentioning

confidence: 97%

Recent Progress in Ferroelectric Diodes: Explorations in Switchable Diode Effect

Jin

Chen

et al. 2013

Nano-Micro Lett.

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Switchable diode effect in ferroelectric diodes has attracted much attention for its potential applications in novel nonvolatile memories. We briefly review recent investigations on the switchable diode effect in ferroelectric diodes both experimentally and theoretically. Many recent studies demonstrate that the interfacial barrier between the metal-ferroelectrics could be modulated by the polarization charges, and the ferroelectric polarization that can be reversed by an external electric field plays a dominant role in the switchable diode effect. Moreover, we review a self-consistent numerical model, which can well describe the switchable diode effect in ferroelectric diodes. Based on this model, it can be predicted that it is a better choice to select metals with a smaller permittivity, such as noble metals, to obtain a more pronounced switchable diode effect in ferroelectric diodes.

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Ferroelectric Schottky diode behavior from aSrRuO3-Pb(Zr0.2Ti0.8

Cited by 66 publications

References 25 publications

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

Recent Progress in Ferroelectric Diodes: Explorations in Switchable Diode Effect

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