2019
DOI: 10.1038/s41598-019-50293-y
|View full text |Cite
|
Sign up to set email alerts
|

Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics

Abstract: We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS2 using first principles and lattice dynamics calculations. First principle calculations show the prominent anharmonic coupling of the infrared inactive interlayer shear and the infrared active phonons. The nonlinear coupling terms generates an effective anharmonic force which drives the interlayer shear mode and lowers the ferroelectric switching barrier depending on the amplitude and polarization of infrared m… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

3
27
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 30 publications
(30 citation statements)
references
References 44 publications
3
27
0
Order By: Relevance
“…These values of reaction energy are comparable or lower than that of bilayer 3R MoS 2 (17.3 meV/f.u. ), 55 α−In 2 Se 2 (50 meV/f.u. ), 56 functionalized bismuth layer (120-548 meV/f.u.…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
“…These values of reaction energy are comparable or lower than that of bilayer 3R MoS 2 (17.3 meV/f.u. ), 55 α−In 2 Se 2 (50 meV/f.u. ), 56 functionalized bismuth layer (120-548 meV/f.u.…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
“…7 between the upper and lower layers of WTe2. These authors continue to suggest that the out-of-plane polarization can be switched by an in-plane interlayer sliding 100,101) , which has been used to explain the switchability of other two-dimensional van der Waals materials, such as In2Se3 102,103) and MoS2 104) . From Fig.…”
Section: Wtementioning
confidence: 97%
“…TMDs are foreseen to find use in most categories of optical modulation . Their semiconducting behavior allows for use in optoelectronic devices and switches, complementing graphene (a conductor) for applications that require 2D materials . These general applications have been abundantly covered in several recent reviews. ,, For 3R-MoS 2 specifically, the breaking of inversion symmetry inhibits interlayer exciton relaxation, which generates an additional degree of freedom in the band valleys (vide supra).…”
Section: Applicationsmentioning
confidence: 99%