Ferroelectric thin films of PbTiO₃on silicon

Abstract

The advantages offered by ferroelectric PbTiO 3 films deposited directly onto silicon in memory applications, field effect devices and pyroelectric detectors have stimulated intense research activity. This review covers work carried out during the last several years on their growth, characterization and device fabrication using ferroelectric thin films of PbTiO 3 on single-crystalline Si substrate with and without buffer layers.

A decade of piezoresponse force microscopy: progress, challenges, and opportunities

“…6,7,8 The ability of ferroelectric materials to exist in two or more polarized states, conserve polarization for a finite period, and change the polarization in a field allows their consideration for non-volatile computer memory devices (FeRAM ). 9,10,11 Extending beyond the realm of inorganic materials, electromechanical coupling is a nearly universal feature of biological systems, examples ranging from piezoelectricity of calcified and connective tissues to voltage controlled muscular contractions, 12 cell electromotility, 13 electromotor proteins, 14 etc. In fact, first observations of electromechanical coupling in biological systems by Galvani performed more than 200 years ago 15 (muscular contraction in a frog under an electric bias) were among the founding experiments in discovery of electricity.…”

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

“…2 On the one hand, lead-based ferroelectric materials exhibit excellent dielectric, pyroelectric and piezoelectric properties. 3 On the other hand, Ba-based perovskites are of great interest as a new dielectric material in capacitors for the next generation of ultra-large-scale integrated dynamic random access memories (ULSI DRAMs) owing to their large dielectric constant, low dielectric dissipation factor and low leakage current level. 4 Ba-based compositions also make a good choice for microwave applications such as frequency agile filters, phase shifters and tunable high-Q resonators.…”

Effect of phase transition on the surface potential of the BaTiO3 (100) surface by variable temperature scanning surface potential microscopy

“…[2][3][4] The fact that the polarization state can be changed under an applied field provides a basis for applications as nonvolatile ferroelectric memories. 5,6 Strong electromechanical coupling related to significant atomic displacements in the ferroelectric phase enables applications in microelectromechanical systems, sensors, and actuators. 7 Many other applications also originate from ferroelectric properties, e.g., the positive temperature coefficient of resistivity effect which is based on the ferroelectric induced compensation of charged grain boundary and reduction of the Shottky barrier below Curie temperature.…”