Ferroelectric thin films: performance modulation and application

Abstract

Ferroelectric thin film materials have been widely applied in a great many fields for their robust spontaneous electric polarization and strong coupling with optical, electric and magnetic fields. In recent...

Ferroelectricity in Low-Permittivity SrZrO3 Epitaxial Films

“…Due to their superior ferroelectric, piezoelectric, and pyroelectric properties, ferroelectric materials have become multifunctional materials with wide application prospects in many fields, such as ferroelectric RAM (random access memory), transducers, pressure sensors, etc. − Due to the inability of known ferroelectric thin film materials to meet the performance requirements of device miniaturization, integration, and light-weight development, the search for and preparation of novel ferroelectric thin film materials is an ongoing topic of interest in the field of ferroelectrics . By the use of low-dielectric-constant ferroelectric thin film materials in ferroelectric field effect transistors (FETs), the voltage divider effect caused by the introduction of the buffer layer can be weakened so that the majority of the applied voltage is supplied to the ferroelectric layer rather than the buffer layer, thereby reducing energy loss, improving data storage time, and avoiding buffer layer breakdown .…”

“…Due to their superior ferroelectric, piezoelectric, and pyroelectric properties, ferroelectric materials have become multifunctional materials with wide application prospects in many fields, such as ferroelectric RAM (random access memory), transducers, pressure sensors, etc. − Due to the inability of known ferroelectric thin film materials to meet the performance requirements of device miniaturization, integration, and light-weight development, the search for and preparation of novel ferroelectric thin film materials is an ongoing topic of interest in the field of ferroelectrics . By the use of low-dielectric-constant ferroelectric thin film materials in ferroelectric field effect transistors (FETs), the voltage divider effect caused by the introduction of the buffer layer can be weakened so that the majority of the applied voltage is supplied to the ferroelectric layer rather than the buffer layer, thereby reducing energy loss, improving data storage time, and avoiding buffer layer breakdown . HfO 2 -based materials have a lower dielectric constant (ε r : 20–50) than perovskite-type ferroelectric film materials, on the same order of magnitude as that of commonly used buffer layer materials (Ta 2 O 5 : 25, Hf-Al-O:10–20), , but their application in memory is limited by the wake-up effect and the coercive electric field close to the breakdown electric field. , In addition to known ferroelectric materials, numerous paraelectric materials with a low dielectric constant have the potential to be converted into ferroelectrics.…”

“…5 By the use of lowdielectric-constant ferroelectric thin film materials in ferroelectric field effect transistors (FETs), the voltage divider effect caused by the introduction of the buffer layer can be weakened so that the majority of the applied voltage is supplied to the ferroelectric layer rather than the buffer layer, thereby reducing energy loss, improving data storage time, and avoiding buffer layer breakdown. 4 HfO 2 -based materials have a lower dielectric constant (ε r : 20−50) than perovskite-type ferroelectric film materials, 6 on the same order of magnitude as that of commonly used buffer layer materials (Ta 2 O 5 : 25, Hf-Al-O:10−20), 7,8 but their application in memory is limited by the wake-up effect and the coercive electric field close to the breakdown electric field. 9,10 In addition to known ferroelectric materials, numerous paraelectric materials with a low dielectric constant have the potential to be converted into ferroelectrics.…”

3D finite element simulation of scratch testing to quantify experimental failure mechanisms of a thin film

“…Nowadays, thin films play an important role in diverse applications, such as nanotechnology, micromechanical systems, optics, microelectronics, and data storage [1][2][3][4][5][6]. In these cases, the optical, magnetic, and electrical properties are the main focus, thus they are commonly studied in detail.…”

Characterization of Ferroelectric Al0.7Sc0.3N Thin Film on Pt and Mo Electrodes

“…Ferroelectrics are materials that possess spontaneous polarization in the absence of an applied electric field, and the direction of its polarization vector can be flipped by the applied electric field [ 1 , 2 ]. It is an essential component in a wide range of applications, such as non-volatile memories and radio frequency (RF) devices [ 3 , 4 , 5 ].…”