Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

Abstract

The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.

Recent Advances in Ferroelectric‐Enhanced Low‐Dimensional Optoelectronic Devices

“…The FE field can effectively function on the thin material and control the polarization directions by altering the FE field due to the highly polarized induced electric field near the surface of FE materials. [76,[114][115][116] To explain the working mechanism of a typical FE-FET PD device, schematic structures and corresponding equilibrium band diagrams at various FE polarization states at V sd = 0 V are shown in Figure 13a-c. [29] This configuration can make three different states possible: without polarization ("fresh" state), P down , and P up .…”

“…The FE field can effectively function on the thin material and control the polarization directions by altering the FE field due to the highly polarized induced electric field near the surface of FE materials. [ 76,114–116 ]…”

Ultraviolet–Visible Photodetector Driven by Local Electrostatic Field from Chargeable Electret

“…[9][10][11][12][13][14][15][16][17][18][19][20] However, drawbacks like poor photo and time responsibility must be addressed before practical application for these metal oxide photodetectors. [21][22][23][24] Carrier trapping and recombination are the primary reasons for lower photosensitive and slow rise and decay times. [25][26][27][28][29] Compared to single-crystal semiconductors, these metal oxides suffer more from carrier trapping and recombination due to their enriched defects.…”

Polarization enhanced photoresponse of InSe via 2D ferroelectric CuCrP2S6

“…Typical strategies to enhance photoresponse include homo/ heterojunction induced built-in eld, [11][12][13] gate-induced electrostatic eld, 14 polarization induced piezo/ferroelectric eld, [15][16][17] plasmonics induced localized optical eld, 18 etc. Ferroelectric modulation holds great promise due to its various inherent advantages, including simplied device fabrication and nonvolatility.…”