The discovery of
two-dimensional (2D) magnetic materials that have
excellent piezoelectric response is promising for nanoscale multifunctional
piezoelectric or spintronic devices. Piezoelectricity requires a noncentrosymmetric
structure with an electronic band gap, whereas magnetism demands broken
time-reversal symmetry. Most of the well-known 2D piezoelectrics,
e.g., 1H-MoS
2
monolayer, are not magnetic. Being intrinsically
magnetic, semiconducting 1H-LaBr
2
and 1H-VS
2
monolayers can combine magnetism and piezoelectricity. We compare
piezoelectric properties of 1H-MoS
2
, 1H-VS
2
,
and 1H-LaBr
2
using density functional theory. The ferromagnetic
1H-LaBr
2
and 1H-VS
2
monolayers display larger
piezoelectric strain coefficients, namely,
d
11
= −4.527 pm/V for 1H-LaBr
2
and
d
11
= 4.104 pm/V for 1H-VS
2
, compared
to 1H-MoS
2
(
d
11
= 3.706 pm/V).
1H-MoS
2
has a larger piezoelectric stress coefficient (
e
11
= 370.675 pC/m) than 1H-LaBr
2
(
e
11
= −94.175 pC/m) and 1H-VS
2
(
e
11
= 298.100 pC/m). The large
d
11
for 1H-LaBr
2
originates from the
low elastic constants,
C
11
= 30.338 N/m
and
C
12
= 9.534 N/m. The sign of the piezoelectric
coefficients for 1H-LaBr
2
is negative, and this arises
from the negative ionic contribution of
e
11
, which dominates in 1H-LaBr
2
, whereas the electronic
part of
e
11
dominates in 1H-MoS
2
and 1H-VS
2
. We explain the origin of this large ionic
contribution of
e
11
for 1H-LaBr
2
through Born effective charges (
Z
11
)
and the sensitivity of the atomic positions to the strain (d
u
/dη). We observe a sign reversal in the
Z
11
values of Mo and S compared to the nominal oxidation
states, which makes both the electronic and ionic parts of
e
11
positive and results in the high value of
e
11
. We also show that a change in magnetic order
can enhance (reduce) the piezoresponse of 1H-LaBr
2
(1H-VS
2
).