2013
DOI: 10.1002/ange.201302188
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Ferroelectricity Driven by Twisting of Silicate Tetrahedral Chains

Abstract: Because of its diverse functionality, ferroelectricity plays a key role in electronic and optical technologies. [1] Ferroelectric materials are characterized by a switchable polarization caused by spontaneous displacements of cations relative to anions, which occurs in centrosymmetric to noncentrosymmetric ferroelectric phase transitions. In the case of displacive-type phase transitions, the phase transition is driven by the freezing of a zone-center optical phonon mode, "soft mode", using an eigenvector simil… Show more

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Cited by 11 publications
(11 citation statements)
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“…These properties indicate that low permittivity can reduce reflection at the air-dielectric interface, minimise cross-coupling with conductors and accelerate electronic signal transition [6]. Furthermore, ferroelectric (FE) materials, especially the new environment-friendly FE oxides [1], can be regarded as voltage-controlled frequency-agile elements in tunable-microwave and millimetre-wave devices, such as capacitors, phase shifters and oscillators [14]. In addition, novel materials with both ferroelectricity and microwave dielectric properties can have other applications.…”
Section: Introductionmentioning
confidence: 99%
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“…These properties indicate that low permittivity can reduce reflection at the air-dielectric interface, minimise cross-coupling with conductors and accelerate electronic signal transition [6]. Furthermore, ferroelectric (FE) materials, especially the new environment-friendly FE oxides [1], can be regarded as voltage-controlled frequency-agile elements in tunable-microwave and millimetre-wave devices, such as capacitors, phase shifters and oscillators [14]. In addition, novel materials with both ferroelectricity and microwave dielectric properties can have other applications.…”
Section: Introductionmentioning
confidence: 99%
“…Low-cost silicates exhibit many interesting and important characteristics, such as ferroelectricity in Bi 2 SiO 5 and Ba 2 ZnSi 2 O 7 [1,2]; low-permittivity microwave dielectric properties in M 2 SiO 4 (M = Ba, Sr, Ca, Zn, Mg, Mn) [3][4][5], MSiO 3 (M = Hf, Mg, Ca) [6][7][8] and Ba 2 ZnSi 2 O 7 [2,9,10]; and a unique thermal expansion coefficient in barium zinc silicates [11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…[5,6] The current approach for energy-conversion devices with traditional semiconductors, however, has two limits: 1) the photovoltage of the devices is limited by the band gap of the semiconductors employed ; 2) the charge-transfer direction is confined and fixed by the junctions of the semiconductor/semiconductor, semiconductor/metal or semiconductor/electrolyte.An alternative approach to overcome the limits of the common semiconductors is to fabricate solar-energy conversion devices with ferroelectric materials. Ferroelectric materials, typically BiFeO 3 (BFO) [7][8][9][10][11] and Pb(Zr,Ti)O 3 (PZT), [12][13][14] have a large, stable and tunable remnant ferro-electric polarization which produces a depolarization (internal) electric field extending over the whole film volume, giving the resulting devices high efficiency in separating photo-generated charges and switching charge-transfer directions. Therefore, Walsh et al [15] claimed that the excellent performance of Perovskite solar cells based on CH 3 NH 3 PbI 3 originated from the presence of ferroelectric domains in the Perovskite structure.…”
mentioning
confidence: 99%
“…An alternative approach to overcome the limits of the common semiconductors is to fabricate solar‐energy conversion devices with ferroelectric materials. Ferroelectric materials, typically BiFeO 3 (BFO)711 and Pb(Zr,Ti)O 3 (PZT),1214 have a large, stable and tunable remnant ferroelectric polarization which produces a depolarization (internal) electric field extending over the whole film volume, giving the resulting devices high efficiency in separating photo‐generated charges and switching charge‐transfer directions. Therefore, Walsh et al 15.…”
mentioning
confidence: 99%