Ferroelectricity revisited—Advances in materials and physics

Samara, G. A.

doi:10.1016/s0081-1947(01)80020-5

Cited by 145 publications

(115 citation statements)

References 247 publications

Supporting

Mentioning

109

Contrasting

Order By: Relevance

“…On the graph, T m marks the temperature of the dielectric permittivity maximum, which shifts with frequency x increasing towards higher temperatures, a behavior typical for relaxor ferroelectrics. 22,23 Indeed, a key feature of relaxors is the appearance of a broad temperature and frequency dependent maximum of the dielectric …”

Section: -2mentioning

confidence: 99%

Electric-field-induced and spontaneous relaxor-ferroelectric phase transitions in (Na1/2Bi1/2)1 − xBaxTiO3

Craciun

Galassi

Bı̂rjega³

2012

Journal of Applied Physics

View full text Add to dashboard Cite

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals Journal of Applied Physics 82, 1804 (1997); 10.1063/1.365983 On the phase identity and its thermal evolution of lead free (Bi 1/2 Na 1/2 )TiO 3 -6 mol% BaTiO 3 Journal of Applied Physics 110, 074106 (2011); 10.1063/1.3645054Determination of depolarization temperature of (Bi 1/2 Na 1/2 )TiO 3 -based lead-free piezoceramics Journal of Applied Physics 110, 094108 (2011) Complex dielectric susceptibility was used to investigate the relaxor properties and the ferroelectric phase transitions in (Na 1/2 Bi 1/2 ) 1 À x Ba x TiO 3 (0 x 0.08) ceramics. XRD was used to characterize the ground states of poled and unpoled samples. Dielectric susceptibility vs. temperature studies allowed to obtain the relaxor properties and to identify the electric field-induced phase transitions in the morphotropic phase boundary (MPB) compositions (0.06 < x < 0.08) and the spontaneous relaxor-ferroelectric phase transitions in the rhombohedral compositions (x < 0.06). The frequency dispersion of the dielectric maximum at T m was observed for all compositions, although of decreased extension for lower x.

show abstract

Section: -2mentioning

confidence: 99%

Electric-field-induced and spontaneous relaxor-ferroelectric phase transitions in (Na1/2Bi1/2)1 − xBaxTiO3

Craciun

Galassi

Bı̂rjega³

2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…RFE materials are studied due to both their peculiar physical properties, which are thought to be connected with the presence of polar nanoclusters above and below the temperature of the maximum of permittivity (T m ) and their potential technical applications in piezoelectric devices and microelectronics. For a recent overview of RFEs see reviews by Ye 1 and Samara 2,3 .…”

Section: Introductionmentioning

confidence: 99%

Dielectric spectra of a new relaxor ferroelectric system Ba2LnTi2Nb3O15 (Ln=La, Nd)

Kamba

Veljko

Kempa

et al. 2005

Journal of the European Ceramic Society

View full text Add to dashboard Cite

show abstract

“…(1) The temperature dependence of the static dielectric constant of a ferroelectric of ABO 3 -type is described by the Barrett's formula (BF) [7,8] …”

Section: Capacitance-voltage Characteristics Analysismentioning

confidence: 99%

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion implantation

Бутенко

Kahatabi

Mogilko

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

We describe here the characteristics of two types of high-quality PbTe p-njunctions, prepared in this work: (1) by thermal diffusion of In 4 Te 3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ).The results, as presented here, demonstrate the high quality of these PbTe diodes.Capacitance-voltage (C-V) and current-voltage (I-V) characteristics have been measured.The measurements were carried out over a temperature range from ~ 10 K to ~ 180 K.The latter was the highest temperature, where the diode still demonstrated rectifying properties. This maximum operating temperature is higher than any of the earlier reported results.The saturation current density, J 0 , in both diode types, was ~ 10 -5 A/cm 2 at 80 K, while at 180 K J 0 ∼ 10 -1 A/cm 2 in TDJ and ~ 1 A/cm 2 in both ion-implanted junctions. At 80 K the reverse current started to increase markedly at a bias of ~ 400 mV for TDJ, and at ∼ 550 mV for IJ. The ideality factor n was about 1.5 -2 for both diode types at 80 K. 2The analysis of the C-V plots shows that the junctions in both diode types are linearly graded. The analysis of the C-V plots allows also determining the height of the junction barrier, the concentrations and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant.The zero-bias-resistance×area products (R 0 A e ) at 80 K are: 850 Ω⋅cm 2 for TDJ,

show abstract

Ferroelectricity revisited—Advances in materials and physics

Cited by 145 publications

References 247 publications

Electric-field-induced and spontaneous relaxor-ferroelectric phase transitions in (Na1/2Bi1/2)1 − xBaxTiO3

Electric-field-induced and spontaneous relaxor-ferroelectric phase transitions in (Na1/2Bi1/2)1 − xBaxTiO3

Dielectric spectra of a new relaxor ferroelectric system Ba2LnTi2Nb3O15 (Ln=La, Nd)

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion implantation

Contact Info

Product

Resources

About